Osram Opto Semiconductors GmbH of Regensburg, Germany claims that it has achieved one of the best values in the world in terms of forward voltage for blue high-current chips, leading to an increase in efficiency of up to 8%. Optimized ...
Researchers in Korea have used spin-coated silver nanowires (Ag NWs) to improve the performance of indium gallium nitride light-emitting diodes (InGaN LEDs) [Gyu-Jae Jeong et al, Appl. Phys. Lett., vol106, p031118, 2015]. The team based at ...
Tags: Spin-Coating, InGaN LEDs
Epistar Corp. and Taiwan Semiconductor Manufacturing Co. (TSMC ) held Board of Directors’ meetings today and approved a sale of TSMC Solid State Lighting (TSMC SSL) shares. Epistar will acquire all shares of TSMC SSL held by TSMC and ...
The US National Academy of Engineering (NAE) is awarding the 2015 Charles Stark Draper Prize for Engineering to Isamu Akasaki, M. George Craford, Russell Dupuis, Nick Holonyak Jr and Shuji Nakamura for “the invention, development, and ...
Tags: LED Lighting, diode applications, Electrical
Researchers at Chinese Academy of Sciences’ Institute of Semiconductors have achieved a 42% enhancement in light output from flip-chip indium gallium nitride (InGaN) light-emitting diodes (LEDs) by incorporating a photonic crystal ...
Tags: photonic crystal(PHC)structure, light-emitting diodes, Electrical
China’s Xidian University has been developing III-nitride double heterostructures (DHs) with indium gallium nitride (InGaN) channels with a view to high-electron-mobility transistors (HEMTs) [Yi Zhao et al, Appl. Phys. Lett., vol105, ...
Tags: HEMTs, InGaN channels
Researchers based in China have found “remarkably reduced efficiency droop” from staircase (SC) thin indium gallium nitride (InGaN) quantum barrier (QB) light-emitting diodes (LEDs) [Kun Zhou et al, Appl. Phys. Lett., vol105, ...
Tags: High Current, remarkably reduced efficiency droop, Electrical
Osram Opto Semiconductors GmbH of Regensburg, Germany and Corning Inc announce a co-marketing agreement to promote Corning Fibrance Light-Diffusing Fiber, a first-of-its-kind technology that embeds lighting into products using Osram laser ...
Tags: Osram, Blue laser, optical fiber
University of California Santa Barbara (UCSB) and Mitsubishi Chemical Corp have reported indium gallium nitride (InGaN) light-emitting diodes (LEDs) with thicker active regions enabled by growing the crystal on the semi-polar (30-3-1) plane ...
Funded by Germany’s Federal Ministry of Education and Research (BMBF) and coordinated by Osram Opto Semiconductors GmbH of Regensburg, Germany, the Hi-Q-LED project has made advances with green LEDs, diminishing the ‘green ...
Researchers based in Singapore and Turkey have been developing a hole accelerator structure with a view to improving the performance of indium gallium nitride (InGaN) semiconductor light-emitting diodes (LEDs) [Zi-Hui Zhang et al, Appl. ...
Tags: Nitride LEDs, InGaN
Xi’an Jiaotong University and Shaanxi Supernova Lighting Technology Co., Ltd., of China have used silver nanorods to engineer gallium vacancy defects in gallium nitride (GaN) to create color tunable light emitting diodes [Yaping Huang ...
Tags: GaN, LEDs, LED heterostructure
LED maker Changelight Co Ltd of Xiamen, China plans to issue 6.07 million stocks to raise a total of RMB800m ($130.39m) in financing in order to expand its production of indium gallium nitride (InGaN) LED epitaxial wafers, according to ...
University of California, Santa Barbara (UCSB) has used photo-electro-chemical etch (PEC) to create 405nm-wavelength vertical-cavity surface-emitting lasers (VCSELs) based on indium gallium nitride (InGaN) multiple quantum wells (MQWs) [C. ...
Researchers from Ohio State University (OSU) and University of California–Irvine (UCI) have developed a band engineering technique to improve the results from photo-electro-chemical (PEC) etch of nitride semiconductors [Prashanth ...