Researchers in China and Turkey have been using varying-thickness gallium nitride (GaN) barriers between indium gallium nitride (InGaN) multiple quantum wells (MQWs) to improve hole distributions and thus to reduce efficiency droop effects ...
Tags: InGaN LEDs, Electrical, Electronics
A contentious controversy surrounds the high intensity of indium gallium nitride (InGaN) LEDs, with experts split on whether or not indium-rich clusters within the material provide their remarkable efficiency. Now, researchers from the ...
Tags: InGaN LEDs, Electronics
Taiwan National Tsing Hua University has been studying ways to improve the modulation performance of high-output-power nitride semiconductor light-emitting diodes (LEDs) [Chien-Lan Liao et al, IEEE Electron Device Letters, published online ...
Tags: GaN InGaN LEDs, LED, Electrical, Electronics, taiwan
Researchers in China have applied graphene as transparent conducting layers (TCLs) in vertical light-emitting diodes (VLEDs) made from indium gallium nitride (InGaN) semiconductors. The researchers were based in Beijing at Chinese Academy ...
Tags: LED
Taiwan researchers have achieved a reduction in luminous efficiency droop from 42%to 7%by inserting p-type indium gallium nitride(p-InGaN)between the active light-emitting and electron-blocking layers of a nitride semiconductor ...