Researchers from GLOBALFOUNDRIES, SEMATECH, and Massachusetts Institute of Technology (MIT) have extended their indium arsenide quantum well metal-oxide-semiconductor field-effect transistor (InAs QW MOSFET) technology to some of the ...
NeoPhotonics Corp of San Jose, CA, USA, a vertically integrated designer and manufacturer of both indium phosphide (InP) and silica-on-silicon photonic integrated circuit (PIC)-based modules and subsystems for bandwidth-intensive, ...
Tags: NeoPhotonics, semiconductor, semiconductor optical components
In collaboration with Imperial College London in the UK and MicroLink Devices Inc of Niles, IL, USA, researchers in the US Naval Research Laboratory’s Electronics Technology and Science have proposed a novel triple-junction solar ...
RF Micro Devices Inc of Greensboro, NC, USA says that RFMD fellow Kevin W. Kobayashi has been named a fellow of the Institute of Electrical and Electronics Engineers by the IEEE board of directors. The IEEE grade of fellow was conferred ...
Tags: RF Micro Devices, Electronics Engineers, IEEE, company news
Teledyne Technologies has agreed to acquire LeCroy in a deal valued at $291m. LeCroy, which supplies oscilloscopes and signal analysers, will be merged into Teledyne, a more broad-based instrumentation firm and defence systems supplier. ...
Researchers at Massachusetts Institute of Technology (MIT) have presented the shortest-gate working transistors yet built using III-V channels [J. Lin et al, IEDM, session 32.1]. The metal-oxide-semiconductor field-effect transistors ...
Tags: transistors, MIT, metal oxide semiconductor
Purdue and Harvard universities have produced stacked nanowire (NW) transistors with increased drive current and maximum transconductance. The results were presented on Wednesday 12 December at the International Electron Devices Meeting ...
Tags: Christmas Tree, 4d Electronics, nanowire transistors, wrap-around gates
Hong Kong University of Science and Technology (HKUST) has grown high-performance indium gallium arsenide (InGaAs) metal–oxide–semiconductor high-electron-mobility transistors (MOSHEMTs) directly on silicon [Xiuju Zhou et al, ...
NeoPhotonics Corp of San Jose, CA, a vertically integrated designer and manufacturer of both indium phosphide (InP) and silica-on-silicon photonic integrated circuit (PIC)-based modules and subsystems for bandwidth-intensive, high-speed ...
Tags: NeoPhotonics Corp, portfolio, networks, high-bandwidth
A team of students at the Fontys Hogeschool in Eindhoven, the Netherlands, has won a challenge set by Atos to create smart mobile applications. The team beat off competition from a team at Warwick University in the UK and one from a ...
Tags: smart mobile application, smart phone, computing, IT industry
For second-quarter 2012, NeoPhotonics Corp of San Jose, CA, a vertically integrated designer and manufacturer of both indium phosphide (InP) and silica-on-silicon photonic integrated circuit (PIC)-based modules and subsystems, exceeded its ...
Tags: NeoPhotonics Corp, InP, PIC
For fiscal second-quarter 2013 (to end-September 2012), Advanced Photonix Inc of Ann Arbor, MI, USA (which designs and makes silicon, InP- and GaAs-based APD, PIN, and FILTRODE photodetectors, HSOR high-speed optical receivers, and T-Ray ...
Tags: Advanced Photonix, sales, high speed optical receiver, network spending
GigOptix Inc of San Jose,CA,USA(a fabless supplier of analog semiconductor and optical components enabling high-speed end-to-end information streaming over optical fiber and wireless networks)says it has experimentally demonstrated the ...
Tags: GigOptix, modulator co-packaged, San Jose, CA, POLYSYS EU Program
Advanced Photonix Inc of Ann Arbor, MI, USA (which designs and makes silicon, InP- and GaAs-based APD, PIN, and FILTRODE photodetectors, HSOR high-speed optical receivers, and T-Ray terahertz instrumentation) has separated the roles of ...
Tags: Advanced Photonix Inc, USA, high technology
Researchers in the USA have achieved record transconductance and cut-off frequencies for indium gallium arsenide (InGaAs) channel metal-oxide field effect transistors (MOSFETs) [D.-H. Kim et al, Appl. Phys. Lett., vol101, p223507, 2012]. ...