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Indium Gallium Arsenide on Insulator Transistors with Buried Yttrium Oxide
Apr 24, 2015Korea Institute of Science and Technology has presented what it says is the first demonstration of indium gallium arsenide on-insulator (In0.53Ga0.47As-OI) transistors with a buried yttrium oxide (Y2O3 BOX) layer [SangHyeon Kim et al, IEEE ...
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