- Location
IntelliEpi
"-
Sale of Gaas Epitaxy Business of Its Soitec Specialty Electronics Subsidiary to IntelliEPI
Sep 30, 2014Soitec of Bernin, France, which makes engineered substrates including silicon-on-insulator (SOI) wafers and III-V epiwafers, has announced the sale of the gallium arsenide (GaAs) epitaxy business of its Soitec Specialty Electronics ...
Tags: sale of GaAs, IntelliEPI, Electronics
-
Soitec Uses Molecular Beam Epitaxy to Manufacture Indium Phosphide
Dec 16, 2013Soitec of Bernin, France, which makes engineered substrates including silicon-on-insulator (SOI) wafers and III-V epiwafers, and Intelligent Epitaxy Technology Inc (IntelliEPI) of Richardson, TX, USA, which uses molecular beam epitaxy (MBE) ...
Tags: IntelliEpi, Soitec, engineered substrates, GaAs
-
Demand for SI GaAs Epitaxial Substrates Fell by Nearly 5%
Oct 9, 2013Due to the slow growth in the GaAs device market and increasing use of multi-band GaAs power amplifiers in cellular applications, total demand for semi-insulating (SI) GaAs epitaxial substrates (from manufacturers such as IQE, VPEC, Kopin, ...
Tags: EPI Production, Electronics
-
MIT Have Presented The Shortest-Gate Working Transistors Yet Built Using III-V Channels
Dec 27, 2012Researchers at Massachusetts Institute of Technology (MIT) have presented the shortest-gate working transistors yet built using III-V channels [J. Lin et al, IEDM, session 32.1]. The metal-oxide-semiconductor field-effect transistors ...
Tags: transistors, MIT, metal oxide semiconductor
-
MIT Researchers Found Post-Etch Anneal Dramatically Improves InGaAs QWFET Performance
Jun 1, 2012Massachusetts Institute of Technology (MIT) researchers have found that a post-etch anneal dramatically improves the performance of their self-aligned indium gallium arsenide (InGaAs) quantum-well metal–oxide–semiconductor ...