Ku Band Gan Hemt

Mitsubishi Electric Expanding Ku-Band GaN HEMT Range to 70W and 100W to Shrink Satellite Earth Stations
Sep 29, 2016
Tokyo-based Mitsubishi Electric Corp is expanding its lineup of gallium nitride high-electron-mobility transistors (GaN HEMTs) to include models operating at frequencies of 13.75–14.5GHz with saturated output power of 100W (50.0dBm) ...

Tags: Mitsubishi Electric, GaN HEMTs
Sumitomo Introduced Its First Ku-Band GaN HEMT Power Amplifier
Jun 6, 2013
In booth 2120 at the IEEE MTT-S International Microwave Symposium (IMS 2013) in Seattle (4–7 June), wireless and optical communications component and module provider Sumitomo Electric Device Innovations USA Inc of San Jose, CA, USA ...

Tags: Sumitomo Electric, Ku-Band Gan Hemt
Mitsubishi Has Developed The MGFK47G3745 Gallium Nitride(GaN)High-Electron-M Transistor
Sep 13, 2012
Tokyo-based Mitsubishi Electric Corp has developed the MGFK47G3745 gallium nitride(GaN)high-electron-mobility transistor(HEMT)Ku-band(12–18GHz)amplifier for satellite earth stations. Picture:Simplified schematic of amplifier. ...

Tags: Electrical, Mitsubishi, Electric