Researchers based in the USA and Korea have found "an unequivocal correlation between the onset of high injection and the onset of the efficiency droop" of gallium indium nitride (GaInN) light-emitting diodes (LEDs) [David S. Meyaard et al, ...
Tags: LED, Nitride LED, Electrical, Electronics
A mature LED market has seen a surge in demands this year. Upstream die manufacturers one by one are transforming their market strategies in response to continual decrease in prices. Chinese manufacturer Hong Hai has been dropping prices ...
Tags: LED Market, Lighting
Following declines of 45% in 2011 and 30% in 2013, LED wafer fab equipment spending will rise 17% to nearly $1.2bn in 2014 as the LED industry is working through its over-capacity problems and will renew capital spending and capacity ...
Tags: LED Equipment, LED, Electrical, Electronics
LED lighting is forecast to become an $80 billion dollar industry by 2020 and the market for epitaxial wafers (epi-wafers) is predicted to grow to $4 billion, according to new research. A survey of LED wafer manufacturers carried out by ...
LED lighting is forecast to become an $80 billion dollar industry by 2020 and the market for epitaxial wafers (epi-wafers) will grow to $4 billion, according to new research. A survey of LED wafer manufacturers carried out by Lux ...
Tags: LED lighting, LED chips, LED, Lights
New advancements in LED technology have allowed for it once more to step up its game. The Smart Lighting Engineering Research Center of Rensselaer Polytechnic Institute?recently announced that they have successfully created "the first ...
Tags: LED, Lights, Lighting, Smart Lighting
Valence Process Equipment, Inc. (VPE) has announced the commercial release of the VPE GaN-500 MOCVD system, a new metal organic chemical vapor deposition (MOCVD) system for production of high-brightness light emitting diodes (LEDs). The VPE ...
Tags: LED industry, LED
Taiwan National Tsing Hua University has been studying ways to improve the modulation performance of high-output-power nitride semiconductor light-emitting diodes (LEDs) [Chien-Lan Liao et al, IEEE Electron Device Letters, published online ...
Tags: GaN InGaN LEDs, LED, Electrical, Electronics, taiwan
Seven O-S-D product categories and device groups reached record-high sales in 2012 compared to 14 new records being set in 2011, according to data shown in the 2013 edition of IC Insights’ O-S-D Report, A Market Analysis and Forecast ...
Tags: opto sensor, Optoelectronics, sensor
SEMI's HB-LED Standards Committee has approved its first standard, specifying sapphire wafers used in making high-brightness light-emitting diode (HB-LED) devices. Sapphire wafers are used in producing HB-LED devices for multiple ...
Tags: SEMI, HB-LED Standards Committee, LED manufacturing supply chain
Spending on LED fab manufacturing equipment will decline 9.2% in 2013 as the industry faces weak long-term demand and consolidates manufacturing capacity. According to the SEMI LED/Opto Fab Forecast, spending on LED fab manufacturing ...
Tags: LED Manufacturing Investment, LED fab manufacturing equipment
Soraa announced yesterday the next generation of its high external quantum efficiency GaN on GaN LEDs. As described in Appl. Phys. Lett. 101, 223509, Soraa’s new LED outperforms the best-documented LED laboratory result by Nichia ...
Tags: Soraa, LED outperforms, GaN LEDs, LED laboratory
Soraa has developed the next generation of its high external quantum efficiency GaN on GaN LEDs, which outperform the best-documented LED laboratory result by Nichia Chemical Co. at current densities of 100 A/cm2 and beyond as described in ...
Tags: Soraa, GaN on GaN LEDs, LED laboratory
Soraa has received an award from the U.S. Department of Energy for its outstanding work in the development of high-efficiency m-plane LEDs grown on low-defect density bulk GaN substrates. The company demonstrated a very high peak internal ...
As described in Applied Physics Letters 101, 223509, Soraa’s new LED outperforms the best-documented LED laboratory result by Nichia Chemical Co. at current densities of 100 A/cm2 and beyond (J. Phys. D: Appl. Phys. 43, 354002). ...