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Laser Processed Sapphire
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HVPE Is an Attractive GaN Growth Technology
Mar 11, 2013Researchers in Japan and Switzerland have used a laser treatment of sapphire substrates to increase the thickness of gallium nitride (GaN) layers grown by hydride vapor phase epitaxy (HVPE) to around 200μm [Hideo Aida et al, Appl. Phys. ...