Light Emission articles & resources on Made-in-China.com

Showa Denko Expands IR LED Range for High-Output Applications

Aug 24, 2017

Tokyo-based Showa Denko K.K. (SDK) has expanded its product lineup of infrared light-emitting diode (IR-LED) chips, which are mainly used as parts of photo-couplers for gate drivers in power semiconductor modules and parts of sensors for ...

Tags: IR-LEDs, SDK

Seoul Semiconductor Files LED Patent Infringement Lawsuit in Germany Against Mouser

Apr 13, 2017

On 31 March, South Korean LED maker Seoul Semiconductor Co Ltd (SSC) filed a patent infringement lawsuit in Germany in the District Court of Düsseldorf against global electronic component distributor Mouser Electronics Inc asserting ...

Tags: Semiconductor, LEDs

LED Technology Breakthroughs in 2016

Dec 31, 2016

As 2016 comes to an end, there were many exciting and surprising technology breakthroughs, based on statistics complied by LEDinside there were at least 10 major technology advancements this year. American researchers make droop free LEDs ...

Tags: LED, UV LED

Integrating InGaAs Well in Ridges on 300mm Silicon

Sep 29, 2016

Imec and Ghent University in Belgium have used aspect ratio trapping (ART) techniques to produce indium gallium arsenide (InGaAs) multiple quantum wells (MQWs) on 300mm-diameter silicon in a ridge format that could be used in future laser ...

Tags: InGaAs MQWs, InGaAs Laser diodes, Imec and Ghent University

Reducing Misfit Dislocations in Green Semi-Polar Light-Emitting Diodes

Aug 26, 2016

University of California Santa Barbara (UCSB) in the USA has used limited-area epitaxy (LAE) on semi-polar gallium nitride (GaN) substrates to reduce misfit dislocation (MD) densities in multiple quantum well (MQW) green light-emitting ...

Tags: LAE, GaN, LEDs

Wafer Reclaim for Indium Gallium Aluminium Phosphide Light Emission

Aug 19, 2016

Researchers in Germany have been developing an epitaxial lift-off (ELO) process that would allow gallium arsenide (GaAs) substrates to be reused for indium gallium aluminium phosphide (InGaAlP) thin-film light-emitting diode (LED) ...

Tags: ELO, GaAs, InGaAlP

Poet Reports Further Step Towards Commercializing Integrated Optoelectronics Technology Platform

Aug 12, 2016

POET Technologies Inc of San Jose, CA, USA — which has developed the proprietary planar optoelectronic technology (POET) platform for monolithic fabrication of integrated III-V-based electronic and optical devices on a single ...

Tags: POET

UIUC Uses MOCVD Growth of Cubic GaN on Silicon to Boost Efficiency and Brightness of Green LEDs

Aug 3, 2016

Researchers at the University of Illinois at Urbana Champaign (UIUC) say that they have developed a new method for making brighter and more efficient green LEDs (R. Liu and C. Bayram, 'Maximizing cubic phase gallium nitride surface coverage ...

Tags: Green LEDs, MOCVD

Get The Facts: LED Street Lighting

Jun 30, 2016

The American Medical Association's (AMA) recently adopted community guidance on street lighting adds another influential voice to issues that have been discussed in the lighting community for some time now, regarding light at night, its ...

Tags: LED technology, blue light, lighting technologies

Journal Article Examines Developments in Lighting Efficiency

Feb 17, 2016

The open-access paper The role of photonics in energy, authored by a team including Zakya Kafafi of Lehigh University, editor of the Journal of Photonics for Energy, traces the development of the science of light from the Arab scholar Ibn ...

Tags: LCDs, OLED, Lighting

Building Components for GaN Power Switches

Dec 18, 2015

A team of engineers from Cornell University, the University of Notre Dame and the semiconductor company IQE has created gallium nitride (GaN) power diodes capable of serving as the building blocks for future GaN power switches -- with ...

Tags: GaN p-n junction diodes, GaN Power Switches, solid-state lighting

Exploring Resonant Energy Transfer From Ingan Wells to Polymers

Dec 16, 2015

University of Cyprus, Cyprus University of Technology, and University of Crete have been exploring the potential of Frster resonant energy transfer (FRET) from an indium gallium nitride (InGaN) single quantum well (SQW) to a light-emitting ...

Tags: InGaN, InGaN quantum well, FRET

New Energy Theory for LEDs Performance Boost

Dec 6, 2015

Hybrid optoelectronic devices based on blends of hard and soft semiconductors can combine the properties of the two material types, opening the possibility for devices with novel functionality and properties, such as cheap and scalable ...

Tags: LEDs Performance, LED

Color Consistency-One of the Challenges for Solid-State Lighting

Nov 12, 2015

When discussing the properties of LEDs, the word ‘color’ immediately comes to our minds; and there are so many facets to our perception of color! An important one is color consistency, which is really a blanket qualifier for a ...

Tags: Solid-State Lighting, LEDs, color consistency

3 Tech Optronics Brings Innovative Breakthrough to LED Light Source Package Technology

Nov 12, 2015

LED light source module has matured these years. More LED packages are suitable for lighting applications have emerged including chip-on-board (COB) and flip chip. Under this situation, there is a growing emphasis on developing ...

Tags: 3Tech Optronics, LED lighting, LED package

Light Emission

Related Products