Technische Universit Wien (TU Wien) in Austria has improved its bi-functional 6.8μm quantum cascade laser and detector (QCLD) technology [Benedikt Schwarz et al, Appl. Phys. Lett., vol107, p071104, 2015]. It is hoped that monolithic ...
Researchers in the USA and Korea have developed a hydrogen high pressure annealing (HPA) process for aluminium oxide/hafnium dioxide (Al2O3/HfO2) gate stacks on indium gallium arsenide (InGaAs) quantum wells [Tae-Woo Kim et al, IEEE ...
Tags: Transistors, capacitors
University of Oklahoma in the USA has developed interband cascade (IC) lasers on indium arsenide (InAs) substrates with low threshold and high-current operation [Lu Li et al, Appl. Phys. Lett., vol106, p251102, 2015]. The researchers claim ...
University of Oklahoma in the USA has developed interband cascade (IC) lasers on indium arsenide (InAs) substrates with low threshold and high-current operation [Lu Li et al, Appl. Phys. Lett., vol106, p251102, 2015]. The researchers claim ...
Home & Gift Harrogate has unveiled the first impressive line-up of inspirational speakers appearing at the inaugural Great Northern Retail Summit this July. Taking place on Monday 20th July at the Majestic Hotel in Harrogate, the one-day ...
Applied Optoelectronics Inc (AOI) of Sugar Land, near Houston, TX, USA, a manufacturer of fiber-optic access network products (including components, modules and equipment) for the internet data-center, cable TV broadband, and ...
Tags: Applied Optoelectronics, lasers
University of California Santa Barbara (UCSB) in the USA has improved hole concentrations in p-type gallium nitride (p-GaN) by using indium as a surfactant in ammonia-based molecular beam epitaxy (NH3MBE) [Erin C. H. Kyle et al, Appl. Phys. ...
Tags: Gallium Nitride, Indium Surfactant
Solar Junction Corp (SJC) of San Jose, CA, USA, which makes what are reckoned to be the highest-efficiency commercially available multi-junction solar cells for terrestrial concentrated photovoltaic (CPV) applications, has announced plans ...
Researchers in USA and Saudi Arabia have been producing 610nm-wavelength red lasers with III-nitride nanowires (NWs) grown on silicon [Shafat Jahangir et al, Appl. Phys. Lett., vol106, p071108, 2015]. With a view to plastic fiber optical ...
Tags: plastic fiber, Electronics
At SPIE Defense, Security and Sensing Technologies conference (DSS 2015) in Baltimore, MD, USA (21-23 April), epiwafer foundry and substrate maker IQE plc of Cardiff, Wales, UK is presenting a series of three invited papers on recent key ...
Tags: DSS 2015, GaSb substrates
University of California Los Angeles (UCLA) has developed gallium antimonide (GaSb) thermophotovoltaic (TPV) cells on gallium arsenide (GaAs) substrates [Bor-Chau Juang et al, Appl. Phys. Lett., vol106, p111101, 2015]. The use of GaAs ...
Tags: TPV devices, lattice mismatch, Electronics
Toyota has hired three general contractors to manage construction of its headquarters in North Texas and to expand its operations in Michigan, Georgetown, and Kentucky. The automaker has chosen Dallas-based contractor named Austin ...
Tags: Toyota, automaker, Auto Parts
Researchers at University of Notre Dame (UND) in the USA have claimed record high breakdown voltage for aluminium gallium nitride (AlGaN/GaN) lateral Schottky barrier diodes (SBDs) on silicon [Mingda Zhu et al, IEEE Electron Device Letters, ...
Tags: silicon diodes, GaN substrates
Researchers in Europe have developed a low-temperature plasma-assisted molecular beam epitaxy (PAMBE) process for direct growth of indium gallium nitride (InGaN) on silicon (Si) substrates [Pavel Aseev et al, Appl. Phys. Lett., vol106, ...
Riber S.A. of Bezons, France, which manufactures molecular beam epitaxy (MBE) systems as well as evaporation sources and effusion cells, has acquired MBE Control Solutions of Santa Barbara, CA, USA. Founded in 2005 by chairman & CEO Andy ...
Tags: MBE, software, Electronics