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Researchers Have Developed Gallium Nitride (GaN) Fin Field-Effect Transistors (FinFETs)
Feb 21, 2013Researchers based in South Korea and France have developed gallium nitride (GaN) fin field-effect transistors (FinFETs) with the lowest claimed subthreshold swing for nitride semiconductor metal-insulator-semiconductor FETs (MISFETs) ...
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Massachusetts Institute Developed an Etch Stop Technique to Improve Performance
Feb 17, 2013A team at Massachusetts Institute of Technology has developed an etch stop technique to improve performance of recessed-gate nitride semiconductor metal-insulator-semiconductor field-effect transistors (MISFETs) [Bin Lu et al, IEEE Electron ...
Tags: GaN MISFET GaN MOCVD, Electronics, Etch