Researchers in China and Hong Kong have claimed the highest output power density and power-added efficiency reported to date for gallium nitride (GaN)-based enhancement-mode metal-insulator-semiconductor high-electron-mobility transistors ...
Tags: GaN MIS-HEMTs, PECVD ALD MOCVD
Japan's Toyoda Gosei Co Ltd has developed vertical gallium nitride (GaN) Schottky barrier diodes (SBDs) capable of handling 50A forward current with 790V reverse blocking [Nariaka Tanaka et al, Appl. Phys. Express, vol8, p071001, 2014]. "To ...
Tags: Vertical Schottky barrier, power supply, diodes Free standing
Researchers in South Korea have used electrochemical potentiostatic activation (EPA) to alter the hydrogen content in p-type gallium nitride (GaN) layers with a view to improved performance of light-emitting diodes (LEDs) [June Key Lee et ...
Tags: GaN layers, P-Gallium Nitride
A team at IBM Research's Zurich Research Laboratory in Rüschlikon, Switzerland, with support from the firm's T. J. Watson Research Center in Yorktown Heights, New York, has developed what it says is a relatively simple, robust and ...
Tags: IBM III-Vs-on-Si, Electrical, Electronics, IBM
Epitaxial deposition and process equipment maker Veeco Instruments Inc of Plainview, NY, USA says that Xiamen Changelight Co Ltd of Xiamen, China has purchased multiple TurboDisc EPIK 700 gallium nitride (GaN) metal-organic chemical vapor ...
Tags: LED, MOCVD Systems
Researchers based in Japan claim the highest output power and external quantum efficiency (EQE) so far for deep ultraviolet (DUV) sub-270nm-wavelength light-emitting diodes (LEDs) during DC operation [Shin-ichiro Inoue et al, Appl. Phys. ...
Tags: DUV LEDs, DUV devices
Epitaxial deposition and process equipment maker Veeco Instruments Inc of Plainview, NY, USA says that the UK's University of Cambridge has ordered its Propel Power gallium nitride (GaN) metal-organic chemical vapor deposition (MOCVD) ...
Tags: GaN-on-Si, Power Electronics, LEDs
Philips originally planned to spin off its wholly-owned subsidiary Lumileds and automobile lighting business to make them an independent company by the end of the first half 2015. But on March 31, Philips announced a deal to sell a 80.1% ...
Tags: Philips, Lumileds, automobile lighting
The LED industry is now fully embracing the fast-growing lighting market as (based on revenues) LED lighting has become the largest sector among LED applications, surpassing LCD backlighting in 2014, and is expected to be the major driver ...
Tags: LEDs MOCVD, LED Chip
University of California Santa Barbara (UCSB) has used indium tin oxide (ITO) as part of the cladding for semi-polar indium gallium nitride (InGaN) laser diodes (LDs) [A. Pourhashemi et al, Appl. Phys. Lett., vol106, p111105, 2015]. The ...
Tags: Indium, InGaN substrates, Electrical
X-ray-based in-line metrology and defect detection tool maker Jordan Valley Semiconductors Ltd (JVS) of Migdal Haemek, Israel has received a strategic order for its QC3 high-resolution x-ray diffraction (HR-XRD) system for strain and ...
Due to the major aggressive expansion plans of some Chinese LED companies, 220 gallium nitride (GaN) metal-organic chemical vapour deposition (MOCVD) reactors will be installed in 2015, according to the latest data from the IHS LED ...
Tags: GaN MOCVD LEDs Epistar Sanan OptoElectronics, LED companies, Electronics
Due to the major aggressive expansion plans of some China-based LED companies, IHS forecasts that 220 gallium nitride (GaN) reactors will be installed in 2015. This new capacity expansion is slightly different from what happened several ...
Tags: GaN, MOCVD Companies, Lights
The lowest price for an LED light bulb will drop from US$8 in 2014 to US$5 in 2015 and ex-factory prices will slip to US$2-3 in 2015, according to chairman Lee Biing-jye for Taiwan-based LED epitaxial wafer and chip maker Epistar. The ...
Researchers at University of Notre Dame (UND) in the USA have claimed record high breakdown voltage for aluminium gallium nitride (AlGaN/GaN) lateral Schottky barrier diodes (SBDs) on silicon [Mingda Zhu et al, IEEE Electron Device Letters, ...
Tags: silicon diodes, GaN substrates