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MOS HEMTs
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HfO2 Has Superior Blocking Characteristics, Surface Passivation Properties
Jan 18, 2013Seoul National University and Korea Electronics Technology Institute have been developing hafnium dioxide (HfO2) as a gate insulator for aluminium gallium nitride (AlGaN) metal-oxide-semiconductor high-electron-mobility transistors ...
Tags: HfO2, gate insulator, Lights, Lighting
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Singapore and Hong Kong Researchers Have Developed a Gold-Free CMOS-Compatible Process
Jun 7, 2012Singapore and Hong Kong researchers have developed a gold-free CMOS-compatible process for nitride semiconductor metal–oxide–semiconductor high-electron-mobility transistors(MOS-HEMTs)[Xinke Liu et ...
Tags: Nitride MOS-HEMTs MOCVD, MOS-HEMTs, AlGaN