NTT Basic Research Laboratories in Japan has used hexagonal boron nitride (h-BN) layers to release nitride semiconductor light-emitting diodes (LEDs) from sapphire and transfer them to commercially available adhesive tape [Toshiki Makimoto ...
Tags: LED
Researchers based in France and Germany have developed techniques for growing indium arsenide (InAs) channel structures on silicon [L. Desplanque et al, Appl. Phys. Lett., vol101, p142111, 2012]. Room-temperature mobility for the epitaxial ...
Tags: growing indium arsenide, InAs, chemicals
18 October 2012 Lithium aluminate substrate for low-cost nonpolar gallium nitride Researchers based in Germany and the Netherlands have been studying the potential for growing nonpolar gallium nitride(GaN)on lithium ...
4 September 2012 Hitachi Cable demo first GaN vertical diode with 3000V breakdown and 1mΩcm2 on-resistance Picture:GaN substrates for power devices.Hitachi Cable Ltd says that it has succeeded in the trial manufacture of what is ...
Tags: Hitachi Cable, GaN, diode
Hamamatsu reports record-power-density VCSEL Hamamatsu Photonics K.K.has reported the first demonstration of 10-watt-class output power for a vertical-cavity surface-emitting laser(VCSEL)array with ion-implanted isolated current ...
Tags: Hamamatsu, Record-Power-Density, current apertures, VCSEL
Soitec (Euronext), a world leader in generating and manufacturing revolutionary semiconductor materials for the electronics and energy industries, and Chongqing Silian Optoelectronics Science & Technology Co., Ltd. (Silian), an established ...
Soitec installation in Durban Soitec,the France-based company specializing in semiconductor materials and concentrated photovoltaics(CPV),says that it is focusing on cost control measures while it gears up for a ramp of production at its ...
Tags: Soitec, Hit by South African Solar
The Millimeter-Wave Electronics Group of the Swiss Federal Institute of Technology(ETH)Zurich has been exploring the use of Teflon amorphous fluoropolymer(AF)as an interlayer dielectric for III-V double heterostructure bipolar ...
Tags: Teflon, transistor, AF, DHBT
Chongqing Silian Optoelectronics Science & Technology Co., Ltd. (Silian) has cooperated with Soitec (Euronext) to jointly develop gallium nitride (GaN) template wafers using hydride vapor phase epitaxy (HVPE). And the partner companies plan ...
Tags: GaN wafers, LED
Soitec and Silian enter joint development agreement on GaN template wafers Soitec of Bernin, France, which makes engineered substrates including silicon-on-insulator (SOI) wafers (as well as III-V epiwafers through its Picogiga ...
Tags: raw material, GaN wafer
Soitec and Silian partner on HVPE LED template-wafer manufacturing 10 Jul 2012 Soitec and Silian will jointly develop GaN LED template-wafer manufacturing technology using an HVPE process that the companies say can lower component costs and ...
Tags: HVPE LED, Template-wafer, Soitec, Silian
Soitec(Euronext),a world leader in generating and manufacturing revolutionary semiconductor materials for the electronics and energy industries,and Chongqing Silian Optoelectronics Science&Technology Co.,Ltd.(Silian),an established supplier ...
Tags: Soitec, semiconductor, GaN, LED
LayTec AG of Berlin,Germany(which makes in-situ metrology systems for thin-film processes,focusing on compound semiconductor and photovoltaic applications)has announced its last call for those wishing to attend the firm's in-situ seminar ...
Tags: LayTec AG of Berlin, inSitu Monitoring, 16th International Conference
AZZURRO Semiconductors announced the closing of a growth financing round providing production capacity to address significant market demand.The EUR 14.5 million investment round was provided by new investors Wellington Partners,Good ...
Tags: GaN, LED industry, AZZURRO, electronics applications