Researchers based in Korea and Egypt have used wafer thinning to increase the efficiency of nitride semiconductor green light-emitting diodes (LEDs) [Wael Z. Tawfik et al, Appl. Phys. Express, vol6, p122103, 2013]. The contributing ...
It is even more important if you measure temperature at different points on the same wafer, on different wafers or in different reactors simultaneously or if you compare the temperature of different runs. Dr. Tony SpringThorpe of the ...
Tags: Electrical, Electronics, Lights, Lighting
In-situ metrology system maker LayTec AG of Berlin, Germany says that Dr Tony SpringThorpe of the National Research Council of Canada recently reported fast and easy temperature calibration of all three heating zones of his showerhead ...
Tags: Electrical, Electronics
Researchers at Meijo University and Nagoya University, Japan, have produced low-resistance n-type aluminium gallium nitride (n-AlGaN) [Toru Sugiyama et al, Appl. Phys. Express, vol6, p121002, 2013]. Using the n-AlGaN as part of an ...
Tags: LED, Electrical, Electronics
University of California Santa Barbara (UCSB) has been using limited area epitaxy (LAE) to improve the performance of lasers diodes (LDs) grown on free-standing semipolar (20-21) gallium nitride (GaN) substrates [Matthew T. Hardy et al, J. ...
University of California Santa Barbara (UCSB) and Fuji Electric Corp of America have been developing indium gallium nitride (InGaN) solar cell structures in efforts to extend the conversion efficiency of multi-junction photovoltaic (PV) ...
Tags: Nitride Barriers, Electrical
Australian Cleantech company BluGlass Limited has today announced that it has increased its operational capacity with the successful commissioning of a former production MOCVD system at the Company’s Silverwater facility. Using a low ...
Tags: Bluegalss, MOCVD System
Chinese Academy of Sciences' Semiconductor Lighting R&D Center at the Institute of Semiconductors in Beijing has developed an electrically driven color-tunable light-emitting diode (LED) based on indium gallium nitride (InGaN) quantum wells ...
Tags: LED, Electrical, Electronics, Semiconductor
Researchers in Taiwan have used nanopyramid nitride semiconductor structures to explore long-wavelength green, olivine and amber light-emitting diode (LED) structures [Shih-Pang Chang, Optics Express, Vol. 21, p23030, 2013]. The team was ...
Tags: Nitride LEDs, Electronics
Taiwan’s National Cheng Kung University has developed near-green light-emitting diodes (LEDs) using a new indium gallium nitride (InGaN) growth process that gives devices with a higher peak external quantum efficiency of 48.6% ...
Tags: LEDs, Near-green LEDs, InGaN MOCVD
Taiwan’s National Tsing Hua University has developed a method to improve the performance of zinc oxide (ZnO) transparent conductive oxide (TCO) as an electrode for short-wavelength nitride semiconductor light-emitting diodes (LEDs) ...
Tags: zinc oxide, LEDs
Researchers in France have developed a monolithic metal-organic vapor phase epitaxy (MOVPE) process for growing indium gallium nitride (InGaN) light-emitting diodes (LEDs) with a multiple quantum well (MQW) light converter [Benjamin ...
Tags: Electrical, Electronics
The Chinese Academy of Sciences’ Research and Development Center for Semiconductor Lighting has been exploring the effect of p-type doping of the barriers in multiple quantum well blue-green (~500nm) light-emitting diode (LED) ...
Tags: Blue-Green LEDs, Electronics
Researchers from the universities of California Santa Barbara (UCSB) and of New Mexico (UNM) have demonstrated semipolar nitride semiconductor blue and green laser diodes (LDs) with part of the upper cladding replaced by indium tin oxide ...
Tags: Iii-Nitride Lasers, Electrical
Vishay Intertechnology, Inc., one of the world’s largest manufacturers of discrete semiconductors, is broadening its optoelectronics portfolio with the introduction of a new high-power, high-speed 940 nm infrared (IR) emitter for ...
Tags: IR LED, Gesture Recognition