MQW articles & resources on Made-in-China.com

Researchers Have Developed an ALD Technique to Create DBR

Feb 17, 2013

Researchers in China have developed an atomic layer deposition (ALD) technique to create distributed Bragg reflectors (DBR) for increasing nitride semiconductor light-emitting diode (LED) output power by up to 43% [Hongjun Chen et al, Appl. ...

Tags: DBR ALD MOCVD LEDs GaN, Lighting, LED

Taiwan Researchers Have Used a STOM as a Template

Jan 21, 2013

Taiwan researchers have used a self-textured oxide mask (STOM) as a template to enhance the external quantum efficiency (EQE) of nitride 380nm ultraviolet (UV) light-emitting diodes (LEDs) by up to 83% [Kun-Ching Shen et al, IEEE Electron ...

Tags: LED light, LED, LED light extraction

Sophia University Has Used Nanocolumns of Nitride Semiconductor to Produce Different LEDs

Dec 31, 2012

Sophia University in Tokyo, Japan, has used nanocolumns of nitride semiconductor to produce different emission color LEDs in a single growth process for what is claimed to be the first time [Katsumi Kishino et al, Appl. Phys. Express, vol6, ...

Tags: Sophia University, LEDs, Sapphire substrates, LEd lighting

Korea's Universities Have Used Aluminum-Alloyed Graphite

Dec 25, 2012

Light output power increased 23% over conventional lateral LEDs. Korea's universities have used aluminum-alloyed graphite as a thermally conducting substrate to improve the light output power performance of nitride semiconductor LEDs by ...

Tags: LED

Create Interference Effects That Reflect Light Back From The Structure

Dec 20, 2012

Two Yale University researchers have developed epitaxial distributed Bragg reflectors (DBRs) in nitride semiconductors with reflectivities of more than 98% [Danti Chen and Jung Han, Appl. Phys. Lett., vol101, p221104, 2012]. Further, the ...

Tags: DBRs, VCSELs, AlGaAs, RCLEDs, GaN, AlGaN, MOCVD

The Japanese Organizations Involved Were Tokuyama Corp, Kobe University

Dec 6, 2012

Researchers from Japan and the USA have reported the first fabrication on hydride vapor phase epitaxy (HVPE) aluminium nitride (AlN) substrates of aluminium gallium nitride (AlGaN) light-emitting diodes (LEDs) that emit at the ...

Tags: DUV, LEDs, AlGaN, AlN substrates, HVPE, light-emitting diodes

Figure 1d Were Grown on C-Plane Patterned Sapphire Substrates Using MOCVD

Nov 9, 2012

National Chung Hsing University in Taiwan has developed a simple silane treatment to improve crystal quality/internal quantum efficiency (IQE) and light extraction in nitride semiconductor light-emitting diodes (LEDs) [Chung-Chieh Yang et ...

Tags: LED

The Electron-Emitting Layer Included Barriers of Lattice-Matched AlInGaN

Nov 6, 2012

Researchers in China have improved LED power output and droop behavior in nitride semiconductor light-emitting diodes (LEDs) by including an electron-emitting layer under the active region [Jianbao Zhang et al, Appl. Phys. Express, vol5, ...

Tags: MOCVD, LED

Semiconductor Had Used Zinc Oxide (ZnO) Nanorods on The LEDs

Oct 25, 2012

Researchers in Korea and India have used zinc oxide (ZnO) nanorods on the rear side tolight-emitting diodes (LEDs) grown on c-plane sapphire [Joo Jin et al, Jpn. J. Appl. Phys., vol51, p102101, 2012]. The researchers were based at Chonbuk ...

Tags: LED

Taiwan Researchers Have Achieved a Reduction in Luminous Efficiency Droop From 42%to 7%

Sep 6, 2012

Taiwan researchers have achieved a reduction in luminous efficiency droop from 42%to 7%by inserting p-type indium gallium nitride(p-InGaN)between the active light-emitting and electron-blocking layers of a nitride semiconductor ...

Tags: Taiwan, LED, MOCVD, GaN

Triangular Quantum Well Injection Boosts Nitride LED Efficiency by 80%

Aug 24, 2012

Triangular quantum well injection boosts nitride LED efficiency by 80% The State Key Laboratory of Optoelectronic Materials and Technology of Sun Yat-sen University has reduced the forward voltages and increased the device efficiency of ...

Tags: LED

Hamamatsu Reports Record-Power-Density VCSEL

Aug 16, 2012

Hamamatsu reports record-power-density VCSEL Hamamatsu Photonics K.K.has reported the first demonstration of 10-watt-class output power for a vertical-cavity surface-emitting laser(VCSEL)array with ion-implanted isolated current ...

Tags: Hamamatsu, Record-Power-Density, current apertures, VCSEL

The Aim of Applying The Au NPs Was to Control The Graphene Work-Function

Aug 2, 2012

Researchers in Korea have been studying how to improve graphene transparent conducting layers(TCLs)using gold nanoparticle(Au-NP)decoration.The team was variously associated with Gwangju Institute of Science and Technology,Korea Basic ...

Tags: Korea, improve graphene transparent conducting layers

Taiwan Has Qualified Its Pyro 400 GaN Surface Temperature Measurement Pyrometry Tool

Jun 7, 2012

LayTec AG of Berlin,Germany(which makes in-situ metrology systems for thin-film processes,focusing on compound semiconductor and photovoltaic applications)says that LED maker Lextar Electronics Corp of Hsinchu,Taiwan has qualified its Pyro ...

Tags: LayTec, GaN LED production, Pyro 400, Germany

AZZURRO CEO Visited Taiwan and Announced a Variety of New Advances in The GaN on Silicon

Feb 7, 2012

AZZURRO Chief Executive Officer (CEO) Erwin WOLF visited Taiwan and announced a variety of new advances in the GaN on Si. programs run by the company. On his trip AZZURRO's VP of Operations Dr. Markus SICKMOELLER and VP Marketing and Sales ...

Tags: Market View, GaN, Raw material

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