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Laytec Expands Epinet Library's High-Temperature Nk Database and Real-Time Analysis for GaN/Sic-4h HEMTs
Dec 3, 2015AlGaN/GaN and InAlN/GaN structures combine high electron mobility and high critical electric field strength and are excellent platforms for the production of next-generation RF and power electronics devices such as high-electron-mobility ...
Tags: LayTec, Metrology MOCVD, AlGaN/GaN HEMTs