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Molybdenum
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Aixtron Provides Deposition System to EPFL for 2D Materials Research
Sep 27, 2017Deposition equipment maker Aixtron SE of Herzogenrath, Germany says that Switzerland’s école Polytechnique Fédérale de Lausanne (EPFL) has purchased a BM NOVO system. The versatile tool, which can produce ...
Tags: 2D Materials, Deposition System
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Indium Gallium Arsenide Quantum Well Transistors on 300mm Silicon
May 18, 2017Researchers in South Korea and the USA claim record 2190cm2/V-s effective mobility for indium gallium arsenide (InGaAs) quantum well (QW) metal-oxide-semiconductor field-effect transistors (MOSFETs) on 300mm-diameter (100) silicon ...
Tags: Transistors, MOSFETs
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Berkeley Lab-LED Team Fabricates Transistor with Record 1nm-Long Gate
Oct 12, 2016A research team led by faculty scientist Ali Javey at the US Department of Energy's Lawrence Berkeley National Laboratory (Berkeley Lab) has created a transistor with a gate length (the defining dimension of a transistor) just 1nm long, ...
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Boosting Transconductance in Indium Gallium Arsenide finFETs
Sep 6, 2016Researchers at Massachusetts Institute of Technology (MIT) in the USA have claimed record transconductance for III-V fin field-effect transistors (finFETs) when normalized according to fin width [Alon Vardi and Jesús A. del Alamo, ...
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HEA2D Consortium to Create Basis for End-to-End Processing Chain for 2D Nanomaterials
Jul 20, 2016Deposition equipment maker Aixtron SE of Herzogenrath, near Aachen, Germany says that it is working with five partners in the HEA2D project to investigate the production, qualities and applications of 2D nanomaterials. When integrated ...
Tags: 2D Nanomaterials, HEA2D Consortium
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Lumigon T3 Smartphone Lets You Take Pictures in The Dark
Jun 8, 2016A new smartphone from Danish manufacturer Lumigon is the first to feature a night vision camera. Smartphone cameras seem to be getting better and better, particularly when it comes to low-light performance. The new Lumigon T3, however, ...
Tags: Lumigon T3, Smartphone
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ORNL-Led Group Grows Aligned Monolayers of Lattice-Mismatched Semiconductors
Apr 21, 2016Led by the Department of Energy's Oak Ridge National Laboratory (ORNL), a group of researchers has synthesized a stack of atomically thin monolayers of two lattice-mismatched semiconductors (Xufan Li et al, 'Two-dimensional GaSe/MoSe2 ...
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Low-Threading-Dislocation AlGaN Template for Ultraviolet Lasers
Nov 19, 2015Sandia National Laboratories in the USA has reported aluminium gallium nitride (AlGaN) laser structures emitting ~350nm ultraviolet radiation from optical and electrical pumping [Mary H. Crawford et al, Appl. Phys. Express, vol8, p112702, ...
Tags: AlGaN, ultraviolet lasers, LEDs
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UCLA Study Finds Multilayer MoS2 as Potential New LED Material
Nov 19, 2015Over the last decade, advances in the technology of light-emitting diodes, or LEDs, have helped to improve the performance of devices ranging from television and computer screens to flashlights. As the uses for LEDs expand, scientists ...
Tags: LEDs, MoS2, LED Material
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Official of Chinese Ministry of Commerce Comments on Cancelling Rare Earth Export Quotas
Oct 23, 2015The Chinese government has recently canceled the export quotas on rare earth, tungsten and molybdenum, drawing close attention of all sectors of society. An official of the Department of Treaty and Law of the Ministry of Commerce said ...
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High-Performance Gallium Nitride on Low-Resistance Silicon
Aug 31, 2015University of Glasgow and University of Cambridge in the UK have claimed the highest frequency performance to date for gallium nitride (GaN) high-electron-mobility transistors (HEMTs) on low-resistivity (LR) silicon (Si) [A. Eblabla et al, ...
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2d Transistor Made From Dual-Phase Transition-Metal Dichalcogenide Crystal
Aug 20, 2015A multi-disciplinary research team led by Young Hee Lee, director of South Korea's Institute for Basic Science (IBS) Center for Integrated Nanostructure Physics at Sungkyunkwan University (SKKU), has devised a fabrication method for the ...
Tags: semiconductor, electronic products, transition-metal dichalcogenide
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High-Pressure Anneal for Indium Gallium Arsenide Transistors
Aug 10, 2015Researchers in the USA and Korea have developed a hydrogen high pressure annealing (HPA) process for aluminium oxide/hafnium dioxide (Al2O3/HfO2) gate stacks on indium gallium arsenide (InGaAs) quantum wells [Tae-Woo Kim et al, IEEE ...
Tags: Transistors, capacitors
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CNSI at UCLA Demonstrated The First Electroluminescence From MoS2
Jul 27, 2015The California NanoSystems Institute (CNSI) at University of California Los Angeles (UCLA) has demonstrated the first electroluminescence from multi-layer molybdenum disulphide (MoS2), which could lead to a new class of materials for making ...
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ORNL Combine a Novel Synthesis Process with Commercial Electron-Beam Lithography Technique
Jul 27, 2015The US Department of Energy's Oak Ridge National Laboratory (ORNL) has for the first time, it is claimed, combined a novel synthesis process with commercial electron-beam lithography techniques to produce arrays of semiconductor junctions ...
Tags: electronics, semiconductor, Heterojunctions
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