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Nitride Barriers
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Indium Gallium Nitride Barriers Enhance LED Power And Efficiency
Mar 15, 2016South China University of Technology has shown improved power and efficiency performance for indium gallium nitride (InGaN) light-emitting diodes (LEDs) with 1.2% indium-content multiple-quantum-well (MQW) barriers [Zhiting Lin et al, J. ...
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Development of Nitride Semiconductor Solar Cells
Jan 6, 2015Rensselaer Polytechnic Institute in the USA has developed nitride semiconductor solar cells with high quantum efficiency for short wavelengths (370-450nm) and concentrated photovoltaics at temperatures up to 400°C [Liang Zhao et al, ...
Tags: PV Performance, Electrical
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China Engineered Gallium Vacancy Defects in Gan to Create Color Tunable Emitting Diodes
Oct 14, 2014Xi’an Jiaotong University and Shaanxi Supernova Lighting Technology Co., Ltd., of China have used silver nanorods to engineer gallium vacancy defects in gallium nitride (GaN) to create color tunable light emitting diodes [Yaping Huang ...
Tags: GaN, LEDs, LED heterostructure
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UCSB Have Been Developing Indium Gallium Nitride Solar Cell Structures
Nov 26, 2013University of California Santa Barbara (UCSB) and Fuji Electric Corp of America have been developing indium gallium nitride (InGaN) solar cell structures in efforts to extend the conversion efficiency of multi-junction photovoltaic (PV) ...
Tags: Nitride Barriers, Electrical