Peking and Xidian universities have jointly developed a self-terminating gate recess etch that allows them to produce aluminium gallium nitride (AlGaN) normally-off metal-oxide-semiconductor field-effect transistors (MOSFETs) with positive ...
Tags: Electrical, gate recess etch
The US Naval Research Laboratory (NRL) in Washington DC has developed a method to grow epitaxial nitride semiconductors on graphene [Neeraj Nepal et al, Appl. Phys. Express, vol6, p061003, 2013]. The researchers hope that this could lead to ...
Tags: Graphene, Electrical, Electronics, hot-electron transistors
Xidian University has developed a nitride semiconductor field-plated metal-insulator-semiconductor high-electron-mobility transistor (FP MIS-HEMT) with ‘negligible’ current collapse, along with high maximum current and enhanced ...
Tags: Silicon Nitride, Electrical
LayTec is happy to announce to have signed a strategic OEM agreement with Evatec Ltd. (Switzerland, www.evatecnet.com) – a leading supplier of thin film deposition systems to semiconductor and optics. LayTec will equip Evatec with ...
Tags: LayTec Evatec, Lights, Lighting
Researchers in the USA at BAE Systems and Purdue University have developed atomic layer deposited (ALD) aluminium oxide as passivation for nitride semiconductor high-electron-mobility transistors (HEMTs) [Dong Xu et al, Electron Device ...
Tags: Oxide Passivation, Electronics, Atomic Layer
Suntron Corp of Phoenix, Arizona, USA, a supplier of integrated electronics manufacturing systems (EMS), says it offers a variety of manufacturing services, including large scale integration for semiconductor capital equipment firms. ...
Tags: Suntron, EMS Services, Semiconductor Firms
Institute of Electronic, Microelectronic and Nanotechnology (IEMN) in France has developed a gallium nitride (GaN) on silicon (Si) high-electron-mobility transistor (HEMT) with a power gain cut-off frequency of 220GHz and a three-terminal ...
Tags: GaN-on-Si HEMT, EpiGaN MOCVD PECVD
Gwangju Institute of Science and Technology and Samsung Electronics Co Ltd of South Korea have developed a zinc oxide (ZnO) nanorod (NR) process for improving light extraction from gallium nitride (GaN) light-emitting diodes (LEDs) by up to ...
Tags: GaN, LEDs, Electronics
National Formosa University in Taiwan has developed a liquid-phase deposition (LPD) process of textured zinc oxide on III-V semiconductor to provide improved absorption of multi-junction solar cells [Po-Hsun Lei et al, J. Phys. D: Appl. ...
Tags: ZnO, germanium solar cells, solar cells
Researchers in China and Canada have developed air-bridge field plates for nitride semiconductor high-electron-mobility transistors (HEMTs) that increase the breakdown voltage and offer more stable performance at raised temperatures [Xie ...
Researchers in the USA have developed radio frequency switches based on nitride semiconductor voltage-controlled capacitors (varactors) [F. Jahan et al, IEEE Electron Device Letters, 9 January 2013]. The team, consisting of engineers from ...
Tags: radio frequency switches, nitride semiconductor voltage, SET
Researchers from GLOBALFOUNDRIES, SEMATECH, and Massachusetts Institute of Technology (MIT) have extended their indium arsenide quantum well metal-oxide-semiconductor field-effect transistor (InAs QW MOSFET) technology to some of the ...
Researchers in Singapore claim the first DC and microwave performance measurements for 0.15μm-gate aluminium gallium nitride(AlGaN)on gallium nitride high-electron-mobility transistors(HEMTs)on silicon substrates with gold-free ...
Digital Mass Flow Controllers (MFC’s), as typically used in the semiconductor, chemical processing, food and pharmaceutical industries, are designed to both measure and control the flow of various gases and liquids. Applications also ...
Tags: Digital Mass Flow Controller, chemical processing, gas, liquid
UK-based Oxford Instruments Plasma Technology (OIPT) reports that its first workshop held at MIT’s Microsystems Technology Laboratories (MTL), Cambridge, MA in December was well attended. The workshop addressed the latest research and ...
Tags: OIPT, Plasma, ALD PECVD, Microsystems Technology Laboratories