Researchers in China have developed indium gallium nitride (InGaN) photovoltaic devices that increase in efficiency with temperature up to 423K [Zhaoying Chen et al, Appl. Phys. Lett., vol109, p062104, 2016]. "The positive efficiency ...
Tags: InGaN solar cells InGaN, MOCVD, positive temperature coefficient
Evince Technology Ltd of Netpark, Sedgefield, County Durham, UK, which is developing technologies to enable the manufacture of synthetic diamond-based electronics, has closed its largest funding round to date, amounting to £750,240 in ...
Tags: Evince, Diamond, investment
Researchers in China have achieved continuous wave (cw) lasing at room temperature for indium gallium nitride (InGaN) laser diodes (LDs) grown directly on silicon (Si) [Yi Sun et al, Nature Photonics, 10, p595, 2016]. The team from Suzhou ...
Tags: InGaN Laser diodes, cw, SINANO
Researchers in Russia have developed an indium gallium arsenide (InGaAs) quantum well laser diode on (001) germanium-on-silicon 'virtual substrate' without offcut angle [V. Ya. Aleshkin et al, Appl. Phys. Lett., vol109, p061111, 2016]. ...
Tags: InGaAs, Laser diodes, III-Vs-on-Si
Researchers at Massachusetts Institute of Technology (MIT) in the USA have claimed record transconductance for III-V fin field-effect transistors (finFETs) when normalized according to fin width [Alon Vardi and Jesús A. del Alamo, ...
University of Montpellier in France claims the first continuous-wave (cw) operation at room temperature of a 15μm indium arsenide (InAs) quantum cascade laser (QCL) [Alexei N. Baranov et al, Optics Express, vol. 24, p18799, 2016]. "To ...
Tags: University of Montpellier, InAs, MBE
University of California Santa Barbara (UCSB) in the USA has used limited-area epitaxy (LAE) on semi-polar gallium nitride (GaN) substrates to reduce misfit dislocation (MD) densities in multiple quantum well (MQW) green light-emitting ...
Yale University and University of Illinois Urbana in the USA have improved the efficiency of gallium arsenide phosphide (GaAsP) solar cells on silicon (Si) by reducing threading dislocation densities (TDDs) [Kevin Nay Yaung et al, Appl. ...
Tags: GaAsP solar cells, GaAsP, MBE, MOCVD
Under a four-year, $2m grant from the US National Science Foundation (NSF), Qiang Lin, assistant professor of electrical and computer engineering in the University of Rochester's Hajim School of Engineering & Applied Sciences, will lead a ...
Tags: SiC Quantum computing
University of California Santa Barbara (UCSB) in the USA has developed a monolithic white light-emitting diode (LED) with blue light produced by electrical pumping, and green/'red' by optical pumping from the blue source [S. J. Kowsz et al, ...
Digital printing firm Electronics For Imaging (EFII) has signed an agreement with Netherlands-based DLL Group to finance EFI inkjet printers for signage and graphics, label and packaging, industrial textile and ceramic tile production. ...
The high-barrier films coatings market environment is currently complex and in a state of flux as it undergoes some significant transitions driven by evolution of the technologies involved and end-user product demands according to the ...
Tags: films coatings, OLED lighting
By optimizing the material growth and manufacturing process, researchers at the China Academy of Engineering Physics' Research Center of Laser Fusion and the Institute of Applied Physics and Computational Mathematics in Beijing have nearly ...
Tags: Cascade Laser, ceramics
South China University of Technology has used low-temperature barriers between indium gallium nitride (InGaN) multiple quantum wells (MQWs) to improve the light output power of light-emitting diodes (LEDs) by 23% to 63.83mW at 65mA [Zhiting ...
Tags: Low-Temperature Barriers, Quantum
The University of Manchester and the University of Cambridge in the UK have been comparing efficiency droop in low-temperature photoluminescence (PL) experiments on non-polar m-plane and polar c-plane indium gallium nitride (InGaN) quantum ...