Schottky Barrier articles & resources on Made-in-China.com

ROHM Semiconductor Launched Two 80milliohm 1200V Silicon Carbide Mosfets

Sep 20, 2013

ROHM Semiconductor of Santa Clara, CA (the US arm of system LSI, discrete components and module product maker ROHM Co Ltd of Kyoto, Japan) has launched two 80milliOhm 1200V silicon carbide MOSFETs, the SCT2080KE and SCH2080KE, designed to ...

Tags: Electrical, Electronics

Device Isolation Was Achieved by Nitrogen Implantation

Aug 12, 2013

Researchers based in Belgium have developed gold-free nitride semiconductor Schottky barrier diodes (SBDs) on 200mm-diameter silicon to complement metal-insulator-semiconductor high-electron-mobility transistors (MISHEMTs) previously ...

Tags: Barrier Diodes, Electrical, Electronics

The UK's University of Manchester Has Used Band Engineering on InP

Jul 8, 2013

The UK's University of Manchester has used band engineering on indium phosphide (InP) to create indium gallium arsenide (InGaAs) pseudomorphic high-electron-mobility transistors (pHEMTs) with reduced gate current leakage and high breakdown ...

Tags: Barriers

IBM Has Introduced The Fifth Generation of Its Semiconductor Technology

Jun 7, 2013

IBM has introduced the fifth generation of its semiconductor technology specialized for high-performance communications. The firm’s latest silicon-germanium (SiGe) chip-making process is designed to enable increasing amounts of data ...

Tags: IBM, SiGe Tektronix

Mitsubishi Has Begun Shipping Three New Types of Silicon Carbide (SiC) Power Module

May 14, 2013

Tokyo-based Mitsubishi Electric Corp says that it has begun shipping three new types of silicon carbide (SiC) power module for home appliances, industrial equipment and railcar traction systems. The modules, which use Schottky barrier ...

Tags: Mitsubishi Electric, Electric

Toshiba Started Volume Production of SiC Power Devices

Apr 15, 2013

In anticipation of growing demand for industrial and automotive applications, Japan’s Toshiba Corp has started volume production of silicon carbide (SiC) power devices at its Himeji Operations–Semiconductor plant in Hyogo ...

Tags: SiC Power Devices, Toshiba

Toshiba Has Started Volume Production of SiC Power Devices at Himeji

Apr 12, 2013

Toshiba has started volume production of silicon carbide (SiC) power devices at Himeji in the Hyogo Prefecture in anticipation of growing demand for industrial and automotive applications. Toshiba will manufacture Schottky Barrier Diodes ...

Tags: Toshiba, SIC, Electronics

Rohm Co Ltd Has Started MOS Module for Inverters/Converters

Mar 21, 2013

Rohm Co Ltd of Kyoto, Japan has started mass-production of the BSM180D12P2C101 1200V/180A-rated silicon carbide (SiC) metal–oxide–semiconductor (MOS) module for inverters/converters used in industrial equipment, photovoltaic ...

Tags: SiC MOS module, Schottky diode, inverters

Hongik University Has Developed a Nitride Semiconductor Device

Mar 12, 2013

South Korea's Hongik University has developed a nitride semiconductor device on silicon with an embedded Schottky barrier diode (SBD) [Bong-Ryeol Park et al, Appl. Phys. Express, vol6, p031001, 2013]. The device was designed as a ...

Tags: Diode, semiconductor device, semiconductor

Hongik University Has Developed a Nitride Semiconductor Device on Silicon

Mar 12, 2013

South Korea's Hongik University has developed a nitride semiconductor device on silicon with an embedded Schottky barrier diode (SBD) [Bong-Ryeol Park et al, Appl. Phys. Express, vol6, p031001, 2013]. The device was designed as a ...

Tags: Diode, semiconductor device, semiconductor

AlGaN Would Create Schottky Barrier Diodes (SBDs)

Feb 4, 2013

Researchers in Korea have used aluminium gallium nitride (AlGaN) heterostructures similar to high-electron-mobility transistors (HEMTs) to create Schottky barrier diodes (SBDs) with increased forward current without damaging the breakdown ...

Tags: aluminium gallium nitride, AlGaN, heterostructures, HEMTs

Researchers Have Created Graphene Nanoribbon Structures with Regions

Dec 11, 2012

Researchers based in the USA and France have created graphene nanoribbon structures with regions that have relatively large energy bandgaps of about 0.5eV [J. Hicks et al, Nature Physics, published online 18 November 2012]. Flat graphene ...

Tags: silicon carbide, graphene, nanoribbon structures, bandgaps, energy bands

Semisouth Was Founded in 2001 by Former MSU

Nov 28, 2012

SemiSouth Laboratories Inc of Starkville, MS, USA, which designs and manufactures silicon carbide (SiC) devices for high-power, high-efficiency, harsh-environment power management and conversion applications, is to close down, according to ...

Tags: SemiSouth SiC, silicon carbide, CVD

Toshiba Has Added to Its Small-Signal,Medium-Power SBDs and MOSFETs

Sep 5, 2012

Toshiba has added to its small-signal,medium-power Schottky barrier diodes(SBDs)and MOSFETs that are suitable for wireless power transfer applications. The range of devices covers single and dual n-and p-channel MOSFETs as well as ...

Tags: Toshiba, SBD, MOSFET, diode

Mitsubishi Electric to Sample SiC Power Modules for More Compact

Jul 10, 2012

Mitsubishi Electric to sample SiC power modules for more compact,efficient electronic equipment Tokyo-based Mitsubishi Electric Corp says that,at the end of July,it will begin shipping samples of five kinds of silicon carbide(SiC)-based ...

Tags: Mitsubishi Electric, SiC power modules, electronic equipment

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