Researchers at Hong Kong University of Science and Technology (HKUST) are proposing using III-nitride and silicon carbide (SiC) hybrid technologies for high-voltage power devices [Jin Wei et al, IEEE Transactions on Electron Devices, vol63, ...
In booth 10.2/L36 at the ANGA COM 2016 Exposition & Congress for Broadband, Cable and Satellite in Cologne, Germany (7-9 June), Qorvo Inc of Greensboro, NC and Hillsboro, OR, USA (which provides core technologies and RF solutions for ...
Tags: Qorvo, CATV, MCM Amplifiers
VisIC Technologies Ltd of Nes Ziona, Israel, a fabless developer of power conversion devices based on gallium nitride (GaN) metal-insulator-semiconductor high-electron-mobility transistors (MISHEMTs) founded in 2010, has announced the ...
Tags: GaN-on-Si, power transistor
STMicroelectronics of Geneva, Switzerland says that its silicon carbide (SiC) metal–oxide–semiconductor field-effect transistor (MOSFET) devices have enabled the ZapCharger Portable (claimed to be the world's smallest ...
Tags: transistor, Electric-Car Charger
At the PCIM (Power Conversion Intelligent Motion) Europe 2016 event in Nuremberg, Germany (10-12 May), Panasonic Automotive & Industrial Systems Europe showcased its technology lineup, highlighting innovations including passive components, ...
Tags: GaN power devices, SiC
In booth 9-242 at PCIM (Power Conversion Intelligent Motion) Europe 2016 in Nuremburg, Germany (10–12 May), Wolfspeed of Research Triangle Park, NC, USA — a Cree Company that makes silicon carbide (SiC) power products including ...
Tags: Power Module, Gate Driver
In hall 9, booth 316 at PCIM (Power Conversion Intelligent Motion) Europe 2016 in Nuremberg, Germany (10-12 May), Japan's Rohm Semiconductor is showcasing its latest power products for high-speed switching and high-power performance, while ...
Fabless high-temperature and and extended-lifetime semiconductor firm CISSOID of Mont-Saint-Guibert, Belgium has delivered the first prototypes of a three-phase 1200V/100A silicon carbide (SiC) MOSFET intelligent power module (IPM) to ...
Wolfspeed of Research Triangle Park, NC, USA – a Cree Company that makes silicon carbide (SiC) and gallium nitride (GaN) wide-bandgap semiconductor devices – says that its GaN-on-SiC RF power transistors have completed testing ...
HRL Laboratories LLC in the USA has developed a gallium nitride (GaN) vertical tunneling Schottky barrier diode (TBS) that gives good combined on and off performance, compared with vertical Schottky barrier diodes (SBDs) [Y. Cao et al, ...
The US Department of Defense's Air Force Research Laboratory, Sensors Directorate, Devices for Sensing Branch (AFRL/RYDD) has issued a Request For Information (RFI) titled 'Development of Large Diameter Silicon Carbide Substrate and ...
Shigeya Kimura, Hisashi Yoshida, Toshihide Ito, Aoi Okada, Kenjiro Uesugi and Shinya Nunoue Metal organic chemical vapor deposition is used to grow aluminum gallium nitride interlayers within indium gallium nitride/gallium nitride ...
The Semiconductor's business unit of Raytheon UK in Glenrothes, Scotland (a subsidiary of Raytheon Company of Waltham, MA, USA) and Newcastle University's School of Electrical and Electronic Engineering have collaborated to produce silicon ...
Tags: Raytheon, Newcastle University, Sic-Based Analog Circuitry
Led by adoption across various market segments, the gallium nitride (GaN) RF device market will double over the next five years, reckons Yole Développement in its new report 'GaN RF Devices Market: Applications, Players, Technology, ...
Market sectors encompassing telecommunications, consumer electronics, innovative energy applications in transportation, electricity generation and other market sectors are increasingly valuing power semiconductor devices as usage of these ...
Tags: AC driver, railway applications, high power