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SiC JFETs
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GaN and SiC Power Semiconductor Market to Surpass $1bn in 2020 Then $3.7bn in 2025
Mar 13, 2016Energized by demand from hybrid and electric vehicles, power supplies and photovoltaic (PV) inverters, the emerging global market for silicon carbide (SiC) and gallium nitride (GaN) power semiconductors will rise from just $210m in 2015 to ...
Tags: Semiconductor Market, GaN, SiC
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Princeton Power Demonstrated a Grid-Tied Bi-Directional Power Converter for Commercial Use
Jun 16, 2015Princeton Power Systems of Princeton, NJ, USA - which designs and manufactures products for energy management, micro-grid operations and electric vehicle charging - has demonstrated for the first time a grid-tied bi-directional power ...
Tags: SiC JFETs, Power Converter
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The Global Market for Power Discrete Devices Will Rise at a Compound Annual Growth Rate
Feb 24, 2014The global market for power discrete devices will rise at a compound annual growth rate (CAGR) of 8.43% over 2013-2018, forecasts a new report from TechNavio (the market research platform of Infiniti Research Ltd). According to the ...
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European Program Aimed at Developing a Cost-Effective and Reliable Technology
May 21, 2013LAST POWER (Large Area silicon-carbide Substrates and heTeroepitaxial GaN for POWER device applications), the European Union-sponsored program aimed at developing a cost-effective and reliable technology for power electronics, has announced ...
Tags: SiC, substrates GaN
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GaN and SiC Power Semiconductors Is Forecast to Grow a Factor of 18
Apr 27, 2013The emerging market for silicon carbide (SiC) and gallium nitride (GaN) power semiconductors is forecast to grow a factor of 18 during the next 10 years, energized by demand from power supplies, photovoltaic (PV) inverters and industrial ...
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SiC and GaN are Forecast to Grow a Remarkable Factor of 18 Over 10 Years
Apr 26, 2013Energized by demand from power supplies, photovoltaic (PV) inverters and industrial motor drives, the emerging market for silicon carbide (SiC) and gallium nitride (GaN) power semiconductors is forecast to grow a remarkable factor of 18 ...
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SemiSouth Is Now Delivering The Industry's First 650V SiC JFET Power Transistors
May 16, 2012SemiSouth Laboratories Inc of Starkville, MS, USA (which designs and manufactures silicon carbide device for high-power, high-efficiency, harsh-environment power management and conversion applications) claims that, after first ...
Tags: SemiSouth, USA, manufactures
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JFET Simplifies Start-up Circuit Design in Three-Phase Auxiliary Power Supplies
May 16, 2012SemiSouth Laboratories Inc of Starkville, MS, USA (which designs and manufactures silicon carbide device for high-power, high-efficiency, harsh-environment power management and conversion applications) has launched a 1700V/1400m ...
Tags: SemiSouth, power supplies, USA
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Semisouth Has Been Granted Its 30th US Patent by The Us Patent and Trademark Office
May 16, 2012SemiSouth Laboratories Inc of Starkville, MS, USA (which designs and manufactures silicon carbide devices for high-power, high-efficiency, harsh-environment power management and conversion applications) has been granted its 30th US patent ...
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Infineon's TO247-packaged CoolSiC 1200V SiC JFET
May 8, 2012In Hall 12,booth 404 at the PCIM Europe 2012 trade show in Nuremberg,Germany(8-10 May),power semiconductor manufacturer Infineon Technologies has launched its new CoolSiC 1200V silicon carbide(SiC)JFET family which,the firm says,takes ...
Tags: Infineon, SiC JFETs, Solar inverters, CoolSiC technology