ROHM Semiconductor of Santa Clara, CA (the US arm of system LSI, discrete components and module product maker ROHM Co Ltd of Kyoto, Japan) has launched two 80milliOhm 1200V silicon carbide MOSFETs, the SCT2080KE and SCH2080KE, designed to ...
Tags: Electrical, Electronics
Cree Inc of Durham, NC, USA says that its newly expanded portfolio of 1200V SiC MOSFETs is being incorporated into the latest power supplies from Netherlands-based Delta Elektronika BV. Consequently, Delta Elektronika has demonstrated a 21% ...
Tags: Electrical, Electronics
Cree announced on July 22 that its newly expanded portfolio of 1200-V SiC MOSFETs is being incorporated into the latest advanced power supplies from Delta Elektronika BV. Delta Elektronika demonstrated a 21 percent decrease in overall ...
The emerging market for silicon carbide (SiC) and gallium nitride (GaN) power semiconductors is forecast to grow a factor of 18 during the next 10 years, energized by demand from power supplies, photovoltaic (PV) inverters and industrial ...
Energized by demand from power supplies, photovoltaic (PV) inverters and industrial motor drives, the emerging market for silicon carbide (SiC) and gallium nitride (GaN) power semiconductors is forecast to grow a remarkable factor of 18 ...
Quarterly Revenue increased 23% year-over-year to a record $349 million Quarterly Net Income increased 134% year-over-year to $22.2 million Cree, Inc. today announced revenue of $348.9 million for its third quarter of fiscal 2013, ended ...
Cree and Delta Energy Systems claim a breakthrough in power density, efficiency and weight of photovoltaic (PV) inverter design. The latest Delta solar inverters use SiC power mosfets from Cree. “The SiC mosfets from Cree were ...
Tags: Cree Sic, Delta Energy
Delta Energy Systems, a subsidiary of Delta Electronics Group (one of the world's largest providers of power management solutions), has launched a new generation of solar photovoltaic (PV) power inverters that use silicon carbide (SiC) ...
Tags: Electronics Group, Electrical
Rohm Co Ltd of Kyoto, Japan has started mass-production of the BSM180D12P2C101 1200V/180A-rated silicon carbide (SiC) metal–oxide–semiconductor (MOS) module for inverters/converters used in industrial equipment, photovoltaic ...
Tags: SiC MOS module, Schottky diode, inverters
Cree, Inc. announces the release of its second-generation SiC MOSFET, enabling systems to have higher efficiency and smaller size at cost parity with silicon-based solutions. These new 1200-V MOSFETs deliver industry-leading power density ...
Tags: SiC MOSFET, silicon-based solutions, silicon
Cree Inc of Durham, NC, USA has released its second generation SiC MOSFET. According to the firm, the new 1200V MOSFETs deliver leading power density and switching efficiency at half the cost per amp of Cree’s previous generation ...
Tags: Cree, SiC MOSFET, solar circuits
Cree, Inc. announces the release of its second generation SiC MOSFET, enabling systems to have higher efficiency and smaller size at cost parity with silicon-based solutions. These new 1200V MOSFETs deliver power density and switching ...
Tags: Cree, Volume Production, power applications
Researchers in Taiwan and USA have developed lateral insulated-gate bipolar junction transistors (IGBTs) using 4H silicon carbide (SiC) technology [Kuan-Wei Chu et al, IEEE Electron Device Letters, published online 9 January 2013]. ...
Tags: insulated gate bipolar transistors, silicon carbide, Electron Device
Mitsubishi Electric to sample SiC power modules for more compact,efficient electronic equipment Tokyo-based Mitsubishi Electric Corp says that,at the end of July,it will begin shipping samples of five kinds of silicon carbide(SiC)-based ...
Tags: Mitsubishi Electric, SiC power modules, electronic equipment
A little bit of semiconductor magic made a lot of difference to RF power amplifiers,and looks like it will do the same for mains PSUs. That magic is the'two-dimensional electron gas'that forms between layers in certain semiconductor ...
Tags: GaN, semiconductor, RF power amplifiers, GaAs, SiC, PSU, JFET