Dow Corning Corp of Midland, MI, USA, which provides silicones and silicon-based technology, has appointed Tang Yong Ang ('TY') as vice president of Dow Corning's Compound Semiconductor Solutions business, a provider of silicon carbide ...
Tags: Electrical, Electronics
Many SiC-based substrate manufacturers exhibited 6-inch (150mm)-diameter wafers at ICSCRM 2013, an international conference on SiC-based power semiconductors, which took place from Sept 29 to Oct 4, 2013, in Miyazaki, Japan. Six-inch ...
Tags: SiC Wafers, Lighting
RF Micro Devices Inc of Greensboro, NC, USA has introduced what it claims are the world's first 6-inch gallium nitride on silicon carbide (GaN-on-SiC) wafers for manufacturing RF power transistors for both military and commercial use. The ...
Azzurro has announced both production and lab milestones in wavelength variation using its GaN-on-Si LED template wafers and Air Water is working on a GaN-on-SiC-on-Si architecture with a new Aixtron MOCVD reactor. While the LED industry ...
Tags: LED Substrate Strategies, Lighting
GT Advanced Technologies Inc of Nashua, NH, USA (a provider of polysilicon production technology as well as sapphire and silicon crystal growth systems and materials for the solar, LED and electronics markets) has introduced a silicon ...
Tags: Silicon, Electrical, LED, solar, electronics
Starting in late 2011, the power electronics downturn in 2012 was quite severe, exhibiting a 20% drop. The market suffered from the global economic downturn, combined with external factors such as China controlling what happened in some ...
Plessey Semiconductors has launched its first GaN-on-silicon LED product, made in its Plymouth fab. "We can offer samples of our entry-level product and we are already discussing orders," company chief operating officer Barry Dennington ...
Tags: LED Sampling, LED, Sampling
Plessey Semiconductors has launched its first GaN-on-silicon LED product, made in its Plymouth fab. "We can offer samples of our entry-level product and we are already discussing orders," company chief operating officer Barry Dennington ...
Tags: LED delivers, LED Sampling, LED
The global gallium nitride (GaN) semiconductor device market will grow at a compound annual growth rate (CAGR) of 18% over 2012-2016, forecasts a new report from TechNavio (the market research platform of Infiniti Research Ltd). ...
Tags: GaN Device, Lighting Market, Lighting
Raytheon Company of Waltham, MA, USA says that its technology facility in Glenrothes, Scotland, UK has successfully tested silicon carbide (SiC) mixed-signal devices at temperatures up to 400°C. “Raytheon UK’s aim is to ...
Tags: Raytheon, SiC, silicon carbide, company news
18 October 2012 Lithium aluminate substrate for low-cost nonpolar gallium nitride Researchers based in Germany and the Netherlands have been studying the potential for growing nonpolar gallium nitride(GaN)on lithium ...
Cree continues to lead the SiC materials marketplace in driving to larger diameters and this latest advancement lowers device cost and enables adoption for customers with existing 150-mm diameter device processing lines. 150-mm epitaxial ...
Tags: Wafer
Cree Inc of Durham, NC, USA has announced the availability of high-quality, low-micropipe 150mm 4H n-type silicon carbide (SiC) epitaxial wafers, with highly uniform epitaxial layers as thick as 100 microns available for immediate purchase ...
Tags: SiC wafer
Deposition equipment maker Aixtron SE of Herzogenrath,Germany says that Showa Denko of Chichibu,Japan has added a SiC CVD Warm-Wall Planetary Reactor system to its Aixtron equipment base,capable of handling either ten 100mm or six 150mm ...
Tags: Aixtron, Showa Denko, CVD system, deposition equipment maker
Cree Inc of Durham,NC,USA has announced the qualification and production release of two new gallium nitride(GaN)processes:G40V4(a 0.25µm process with operating drain voltage up to 40V)and G50V3(a 0.4µm process with operating ...