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SiC devices
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Infineon Introduces GaN Devices for Mobile Base Station Transmitters
Nov 5, 2015Infineon Technologies AG introduced its first devices in a family of Gallium Nitride (GaN) on Silicon Carbide (SiC) RF power transistors at this year's European Microwave Week. As part of Infineon’s industry-leading GaN portfoliothe ...
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Infineon Introduces GaN Devices for Mobile Base-Station Transmitters; Charts Path to 5G Cellular Infrastructure
Sep 15, 2015In booth C309 (Hall Ternes) at European Microwave Week (EuMW 2015) in Paris, France (6-11 September), Infineon Technologies AG of Munich, Germany has introduced its first devices in a family of gallium nitride on silicon carbide ...
Tags: EuMW 2015, GaN-on-silicon, GaN-on-SiC, PA
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Researchers in USA Develops Vertical Schottky and Pn GaN Diodes on Silicon
Jul 27, 2015Researchers in the USA have developed vertical Schottky and pn gallium nitride (GaN) diodes on silicon with performance comparable to devices grown on much more expensive substrates [Yuhao Zhang et al, IEEE Transactions On Electron Devices, ...
Tags: electronics, semiconductor
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ROHM's SiC Mosfet Has Been Adopted in The New Sic-Pulser Series
Mar 5, 2015ROHM of Kyoto, Japan says that its SCT2080KE silicon carbide (SiC) MOSFET has been adopted in the new SiC-Pulser Series of ultra-high-voltage pulse generators launched by Japan's Fukushima SiC Applied Engineering Inc. Picture: ...
Tags: Pulse Generators, Generators
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Power Semiconductor Device Market Rose by 8.4% to $11.5bn in 2014
Mar 5, 2015After two tough years of stagnation, in 2014 the power semiconductor device market returned to growth, rising by 8.4% to $11.5bn, according to the report 'Status of the Power Electronics Industry (February 2015 edition)' from Yole ...
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Episil Semiconductor Wafer Put Into Operation an Aix G5 WW CVD Reactor for SiC Epitaxy
Mar 4, 2015Deposition equipment maker Aixtron SE of Aachen, Germany says that Taiwanese group Episil Semiconductor Wafer Inc has put into operation an AIX G5 WW (Warm-Wall) chemical vapor deposition (CVD) reactor for silicon carbide (SiC) epitaxy. ...
Tags: silicon components, Electronics
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Element Six Aims to Extend Its R&D LED to The Third Consecutive Year of High Growth
Jan 23, 2015Luxembourg-registered synthetic diamond materials firm Element Six (a member of the De Beers Family of Companies) says that its Technologies Group experienced more than 20% growth in 2014, marking its third consecutive year of high growth. ...
Tags: synthetic diamond solutions, emerging markets, Electrical
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CREE Introduced a New Mosfet Design Kit
Jan 8, 2015Cree Inc of Durham, NC, USA, which makes silicon carbide (SiC) power devices, has introduced a new MOSFET design kit that includes all of the components needed to evaluate Cree MOSFET and Schottky diode performance in a configurable ...
Tags: configurable half-bridge circuit, MOSFET design, Electrical
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USA Has Released What It Claims Is The First All-Sic 1.7kv Power Module
Oct 10, 2014Cree Inc of Durham, NC, USA has released what it claims is the first all-SiC (silicon carbide) 1.7kV power module in an industry-standard 62mm housing. Powered by Cree's C2M large-area SiC chip technology, the new half-bridge module ...
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Germany Has Teamed up with Fraunhofer Iisb to Develop 150mm SiC
Sep 10, 2014Deposition equipment maker Aixtron SE of Aachen, Germany has teamed up with research institution Fraunhofer IISB (Institute for Integrated Systems and Device Technology) in Erlangen, Germany, to develop 150mm silicon carbide (SiC) epitaxy ...
Tags: Aixtron CVD SiC, Electrical, Electronics
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Power Electronic Converters Are Becoming Even More Efficient
Jun 5, 2014Due to new components, power electronic converters for power engineering applications are becoming even more efficient. In particular, silicon carbide (SiC) devices enable the construction of extremely efficient and compact power electronic ...
Tags: SiC Devices, DC-DC Converter
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Its Gallium Nitride (GaN)-on-Diamond Wafers Have Been Proven by Raytheon Company
May 15, 2014Luxembourg-registered synthetic diamond materials firm Element Six (a member of the De Beers Family of Companies) says that its gallium nitride (GaN)-on-diamond wafers have been proven by Raytheon Company to significantly outperform ...
Tags: GaN-on-Diamond Wafers, GaN-on-SiC
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Dow Corning Corp Introduced a Product Grading Structure for SiC Crystal Quality
May 13, 2014Dow Corning Corp of Midland, MI, USA, which provides silicon and wide-bandgap semiconductor technology, has introduced a product grading structure for silicon carbide (SiC) crystal quality that specifies new tolerances on killer device ...
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MPM Has Increased and Expanded Its Manufacturing Capacity of Tantalum Carbide Coatings
Mar 18, 2014Momentive Performance Materials Quartz Inc. (MPM) has increased and expanded its manufacturing capacity of tantalum carbide coatings (TaC) in response to the larger demand for silicon carbide power (SiC) devices and increased need for ...
Tags: Coating, Construction, Decoration
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STMicroelectronics Unveilled a Family of High-Voltage SIC Power MOSFET Products
Mar 14, 2014STMicroelectronics of Geneva, Switzerland has unveilled a family of high-voltage silicon carbide (SiC) power MOSFET products, enabling power supply designers to drive up energy efficiency in applications such as solar inverters and electric ...
Tags: Sic Power Mosfets, STMicroelectronics, high-voltage silicon carbide
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