SiC material articles & resources on Made-in-China.com

EpiGaN Adds Brussels/Beijing-Based Private Equity Fund ACAPITAL as Investor

Aug 31, 2016

EpiGaN nv of Hasselt, near Antwerp, Belgium, which supplies commercial-grade 150mm- and 200mm-diameter gallium nitride on silicon (GaN-on-Si) epitaxial wafers for 600V high-electron-mobility transistor (HEMT) power and RF devices, says that ...

Tags: EpiGaN, GaN-on-Si, ACAPITAL

EpiGaN Nominated for Eu Innovation Radar Prize

Aug 17, 2016

EpiGaN nv of Hasselt, near Antwerp, Belgium, which supplies commercial-grade 150mm- and 200mm-diameter gallium nitride on silicon (GaN-on-Si) epitaxial wafers for 600V high-electron-mobility transistor (HEMT) power semiconductors, has been ...

Tags: EpiGaN, GaN-on-Si, nomination

Japan's Rohm Started Mass Production of Silicon Carbide Mosfet

Jun 9, 2015

Japan's Rohm Co Ltd has started mass production of what it claims is the first silicon carbide (SiC) MOSFET (metal-oxide-semiconductor field-effect transistor) with a trench structure (where the gate is formed on the sidewall of a groove in ...

Tags: ROHM Semiconductor SiC power MOSFET, Sic Mosfet

The Next-Generation Power Semiconductor Market to Increase

Oct 16, 2014

The next-generation power semiconductor market will increase at a compound annual growth rate (CAGR) of 63% between 2011 and 2017 to more than $500m, forecasts market research firm The Information Network in its report 'Next-Generation ...

Tags: Power Semiconductor, Electronics

Germany Has Teamed up with Fraunhofer Iisb to Develop 150mm SiC

Sep 10, 2014

Deposition equipment maker Aixtron SE of Aachen, Germany has teamed up with research institution Fraunhofer IISB (Institute for Integrated Systems and Device Technology) in Erlangen, Germany, to develop 150mm silicon carbide (SiC) epitaxy ...

Tags: Aixtron CVD SiC, Electrical, Electronics

PVA Tepla Launched The Basic-T Physical Vapor Transport Crystal Growth System

Oct 9, 2013

PVA TePla of Wettenberg, Germany has launched the baSiC-T physical vapor transport (PVT) crystal growth system (which uses sublimation of a source powder at high temperatures) for the mass production of silicon carbide (SiC) material. ...

Tags: PVT System, Modular

GT Has Introduced a Silicon Carbide (SiC) Production Furnace

Jul 3, 2013

GT Advanced Technologies Inc of Nashua, NH, USA (a provider of polysilicon production technology as well as sapphire and silicon crystal growth systems and materials for the solar, LED and electronics markets) has introduced a silicon ...

Tags: Silicon, Electrical, LED, solar, electronics

SiC Is Expected to Be Used Increasingly in Power Semiconductors

Mar 13, 2013

Mitsubishi Electric Corporation announced this week that it has developed a prototype multi-wire electrical discharge processing technology to cut very hard four inch square polycrystalline silicon carbide (SiC) ingots into 40 pieces at ...

Tags: Mitsubishi, SiC ingot slicing technology, Electric

Mitsubishi Has Developed a Prototype Multi-Wire Electrical Discharge Processing Technology

Feb 11, 2013

Tokyo-based Mitsubishi Electric Corp says that it has developed a prototype multi-wire electrical discharge processing technology to cut very hard 4-inch polycrystalline silicon carbide (SiC) ingots into 40 pieces simultaneously. Up to ...

Tags: Mitsubishi Electric, SiC Ingot Slicing, Electronics

Microsemi Launched a Family of 1200V Schottky Diodes Based on SiC Material and Technology

Nov 16, 2012

Microsemi Corp of Aliso Viejo, CA, USA (which designs and makes analog and RF devices, mixed-signal integrated circuits and subsystems) has launched a family of 1200V Schottky diodes based on silicon carbide (SiC) material and technology. ...

Tags: SiC

SIC Will Not Exceed $80m in 2012

Jul 17, 2012

Despite a cumulative silicon carbide (SiC) raw wafer and epiwafer market that will not exceed $80m in 2012, the body of related patents comprises more than 1772 patent families and over 350 companies since 1928, according to the report ...

Tags: Raw Material, Wafer

5 June 2012 : SiC Drives Material Innovation for High-Power Electronics

Jun 5, 2011

5 June 2012 SiC drives material innovation for high-power electronics Due to its superior thermal and electrical properties, the wide-bandgap material silicon carbide (SiC) has emerged as a key enabling material that has the potential to ...

Tags: SiC material, MOSFET, performance criteria, Defense agencies

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