The release of GAN-on-silicon LED chips in China presents a lower-cost alternative that is comparable in quality to mainstream products based on sapphire and SiC substrates. R&D work leveraging the advantages of silicon substrates has ...
Tags: led chip
18 October 2012 Lithium aluminate substrate for low-cost nonpolar gallium nitride Researchers based in Germany and the Netherlands have been studying the potential for growing nonpolar gallium nitride(GaN)on lithium ...
Cree continues to lead the SiC materials marketplace in driving to larger diameters and this latest advancement lowers device cost and enables adoption for customers with existing 150-mm diameter device processing lines. 150-mm epitaxial ...
Tags: Wafer
Dongguan Tianyu Semiconductor Technology Co Ltd,which claims to be the first manufacturer of silicon carbide(SiC)epitaxial wafers in China,has started to expand its SiC epiwafer business globally after the completion of three contracts in ...
Cree Inc of Durham, NC, USA has announced the availability of high-quality, low-micropipe 150mm 4H n-type silicon carbide (SiC) epitaxial wafers, with highly uniform epitaxial layers as thick as 100 microns available for immediate purchase ...
Tags: SiC wafer
Friedrich-Alexander University Erlangen-Nuremberg,Germany,and ACREO AB,Sweden,have developed a transistor technology combining graphene with silicon carbide(SiC)[S.Hertel et al,Nature Communications,published 17 July 2012]. Graphene is a ...
Tags: transistor, Graphene, Electrical
China's Xiamen Powerway Advanced Material Co Ltd (PAM-Xiamen), which supplies ultra-high purity crystalline gallium nitride (GaN) and aluminium gallium nitride (AlGaN) materials and other related products and services, has announced the ...
Tags: Free-standing, SI, carbide
Hong Kong University of Science and Technology has achieved record maximum drain currents and peak transconductances for enhancement-mode(normally off)metal–oxide–(nitride)semiconductor heterojunction field-effect ...
Recognized as a compelling alternative to silicon for many RF applications,gallium nitride(GaN)technology has generated significant industry interest due to its performance advantages,but has faced significant challenges related to ...
Tags: NXP, RF applications, mainstream GaN
A little bit of semiconductor magic made a lot of difference to RF power amplifiers,and looks like it will do the same for mains PSUs. That magic is the'two-dimensional electron gas'that forms between layers in certain semiconductor ...
Tags: GaN, semiconductor, RF power amplifiers, GaAs, SiC, PSU, JFET
Researchers at Ukraine's Lashkaryov Institute of Semiconductor Physics have been studying current crowding and electrical efficiency degradation in vertical indium gallium nitride(InGaN)light-emitting diodes(LEDs)made from material grown on ...
Tags: Vertical InGaN/SiC LEDs, SiC substrates, massive heat sink