SiC technology articles & resources on Made-in-China.com

ON Semiconductor Extends Sic Diode Portfolio by Adding 650V Schottkys

Mar 2, 2018

ON Semiconductor of Phoenix, AZ, USA – which supplies power management, analog, sensors, logic, timing, connectivity, discrete, system-on-chip (SoC) and custom devices – has extended its silicon carbide (SiC) diode portfolio by ...

Tags: sensors, analog

SiC Power Device Market to Grow at 40% CAGR From 2020 to More Than $1bn in 2022, After Tipping Point in 2019

Sep 27, 2017

“The SiC power business is concrete and real, with a promising outlook,” said Yole Développement in 2016. The trend has not changed in 2017, and the SiC industry is going even further as industrial players have increasing ...

Tags: SiC power, SiC devices

Microsemi Awarded Contract to Speed Adoption of SiC Technology as New Member of PowerAmerica

Aug 23, 2017

Microsemi Corp of Aliso Viejo, CA, USA (which makes chips for aerospace & defense, communications, data-center and industrial markets) has become a member of PowerAmerica — a manufacturing institute consisting of public and private ...

Tags: Microsemi, chips

Pallidus Launches M-SiC Silicon Carbide Source Material and Technology Platform

Aug 18, 2017

Pallidus Inc (a Melior Innovation company) of Houston, TX, USA has launched its proprietary M-SiC silicon carbide source material and technology platform, with the capability to deliver cost/performance parity against silicon devices in the ...

Tags: Silicon Carbide, Pallidus

Qorvo Launches First Dual-Channel GaN Front-End Module for 39GHz 5G Wireless

Jun 2, 2017

Qorvo Inc of Greensboro, NC, USA (which provides core technologies and RF solutions for mobile, infrastructure and defense applications) has launched what it claims is the first gallium nitride on silicon carbide (GaN-on-SiC) front-end ...

Tags: silicon carbide

Qorvo Launches Compact GaN L- and S-Band Power Amplifiers for Advanced Radar Systems

Oct 12, 2016

Qorvo Inc of Greensboro, NC and Hillsboro, OR, USA (which provides core technologies and RF solutions for mobile, infrastructure and defense applications) has launched two new power amplifiers (PAs) including what is claimed to be the first ...

Tags: Qorvo, PAs, GaN technology

ABB's Sic-Based Battery Charger for Trains Shrinks Size Tenfold and Cuts Weight by 80%

Sep 21, 2016

At the InnoTrans trade show in Berlin, Germany (20-23 September), ABB of Zurich, Switzerland is launching a next-generation battery charger based on silicon carbide (SiC) power semiconductors for use in all rail applications. Train ...

Tags: ABB, InnoTrans trade show in Berlin, Sic-based battery charger

Bi-Directional Silicon Carbide Planar Insulated-Gate Bipolar Transistor

Jul 5, 2016

Rensselaer Polytechnic Institute and General Electric Global Research Center in the USA "experimentally demonstrate, for the first time, bi-directional 4H-silicon carbide planar gate, insulated-gate bipolar transistors (IGBTs) fabricated on ...

Tags: Bipolar Transistor

Wolfspeed's GaN RF Devices Demonstrate Reliability for Harsh Space Environments

Apr 15, 2016

Wolfspeed of Research Triangle Park, NC, USA – a Cree Company that makes silicon carbide (SiC) and gallium nitride (GaN) wide-bandgap semiconductor devices – says that its GaN-on-SiC RF power transistors have completed testing ...

Tags: Wolfspeed, Harsh Space Environments

GaN RF Device Market to Grow at 14% CAGR, Rising by 2.5x by End-2022

Mar 30, 2016

Led by adoption across various market segments, the gallium nitride (GaN) RF device market will double over the next five years, reckons Yole Développement in its new report 'GaN RF Devices Market: Applications, Players, Technology, ...

Tags: GaN RF GaN-on-SiC GaN-on-Si

Monolith Demonstrating Fast-Switching SiC MOSFETs At APEC

Mar 16, 2016

In booth 1655 at the Applied Power Electronics Conference & Exposition (APEC 2016) in Long Beach, CA, USA (20–24 March), Monolith Semiconductor Inc of Round Rock, TX, USA is demonstrating its fast-switching silicon carbide (SiC) ...

Tags: SiC MOSFET, SiC Schottky barrier diodes, SiC power devices

UK's EPSRC Centre for Power Electronics and GaN Systems Launch Future Power Challenge

Feb 14, 2016

GaN Systems Inc of Ottawa, Ontario, Canada, a fabless developer of gallium nitride (GaN)-based power switching semiconductors for power conversion and control applications, together with the Centre for Power Electronics of the UK's ...

Tags: GaN Systems, power electronics

Cree Co-founder on RF and Power Business New Brand Identity and Market Trends

Oct 14, 2015

Leading U.S. LED manufacturer Cree announced earlier this month, it will be rebranding its power and RF business as Wolfspeed. In an exclusive interview with LEDinside analyst and assistant manager Joanne Wu, Cree co-founder and CTO John ...

Tags: Cree, Wolfspeed, RF and power business, Market Branding

GE and SUNY Poly Developing SiC Power Electronics Packaging Facility at Quad C

Aug 25, 2015

New York State governor Andrew Cuomo has announced that GE Global Research Center of Niskayuna, NY, USA will expand its New York global operations to the Mohawk Valley, serving as the anchor tenant of the Computer Chip Commercialization ...

Tags: SiC Power Electronics, packaging

Princeton Power Demonstrated a Grid-Tied Bi-Directional Power Converter for Commercial Use

Jun 16, 2015

Princeton Power Systems of Princeton, NJ, USA - which designs and manufactures products for energy management, micro-grid operations and electric vehicle charging - has demonstrated for the first time a grid-tied bi-directional power ...

Tags: SiC JFETs, Power Converter

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