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Silicon CMOS
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EU's INSIGHT Project To Develop III-V Nanowire-Based CMOS On Silicon System-on-Chip
Mar 9, 2016Future radar imaging systems and 5G communication systems will generate improved resolution and provide higher data-transmission rates when operated at higher frequencies, but at the cost of increased power consumption. To reduce power ...
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Aixtron Receives CS High-Volume Manufacturing Award For AIX G5+C GaN-on-Si MOCVD Production System
Mar 9, 2016Deposition equipment maker Aixtron SE of Herzogenrath, near Aachen, Germany received the CS High-Volume Manufacturing Award 2016 for its new fully automated AIX G5+ C metal-organic chemical vapor deposition (MOCVD) system at this year's CS ...
Tags: Aixtron, MOCVD, CS industry Awards, GaN-on-Si
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Forward-Bias Gate Breakdown in HEMTs with Enhancement-Mode P-Gan Gate
Sep 14, 2015Researchers in Belgium have studied forward gate breakdown of enhancement-mode aluminium gallium nitride/gallium nitride (AlGaN/GaN) high-electron-mobility transistors with p-type GaN gate electrodes [Tian-Li Wu et al, IEEE Electron Device ...
Tags: P-Gan Gate, Electronics
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A Low-Temperature PAMBE Process for Direct Growth of InGaN on Silicon Substrates
Mar 24, 2015Researchers in Europe have developed a low-temperature plasma-assisted molecular beam epitaxy (PAMBE) process for direct growth of indium gallium nitride (InGaN) on silicon (Si) substrates [Pavel Aseev et al, Appl. Phys. Lett., vol106, ...
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The Gallium Arsenide Integrated Circuit Market Will Grow to $8bn in 2017
Aug 20, 2014The gallium arsenide integrated circuit market will grow to $8bn in 2017, according to a new report ‘The GaAs IC Market’ by The Information Network. The biggest enabler of the mobile data increase and the most important driver ...
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POET Has Developed The Proprietary POET Platform for Monolithic Fabrication
May 29, 2014POET Technologies Inc of Toronto, Canada – which, through subsidiary OPEL Defense Integrated Systems (ODIS Inc) of Storrs, CT, USA, has developed the proprietary planar-optoelectronic technology (POET) platform for monolithic ...
Tags: POET, Process Equipment
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IBM Developed a Technique to Grow Hexagonal
Apr 17, 2014IBM Research's Thomas J. Watson Research Center and Northwestern University have developed a technique to grow hexagonal- and cubic-phase gallium nitride (h-/c-GaN) on standard (100) silicon (Si) [Can Bayram et al, Adv. Funct. Mater., ...
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EVG Has Ordered an EVG850lt Fully Automated Production Bonding System
Dec 12, 2013EV Group (EVG) of St Florian, Austria, a supplier of wafer bonding and lithography equipment for MEMS (microelectromechanical systems), nanotechnology and semiconductor applications, says that the Singapore-MIT Alliance for Research ...
Tags: EV Group Bonding, Wafer Bonding
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POET Developed The Proprietary Planar
Aug 19, 2013POET Technologies Inc of Toronto, Ontario, Canada – which, through subsidiary OPEL Defense Integrated Systems (ODIS Inc) of Storrs, CT, USA, has developed the proprietary planar-optoelectronic technology (POET) platform for monolithic ...
Tags: OPEL, ODIS, POET, Electrical, Electronics
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IEMN Developed a GaN on Silicon High-Electron-Mobility Transistor
Apr 17, 2013Institute of Electronic, Microelectronic and Nanotechnology (IEMN) in France has developed a gallium nitride (GaN) on silicon (Si) high-electron-mobility transistor (HEMT) with a power gain cut-off frequency of 220GHz and a three-terminal ...
Tags: GaN-on-Si HEMT, EpiGaN MOCVD PECVD
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Aledia Is a Start-up Company Spun out of The Cea-Leti Labs in 2011, and Based at The Cea
Apr 7, 2013Veeco Instruments Inc. (Nasdaq: VECO) announced today that CEA-Leti, a world-renowned research lab based in Grenoble, France, has selected Veeco’s TurboDisc® K465i Metal Organic Chemical Vapor Deposition (MOCVD) system for its ...
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Cea-Leti Spin off Aledia Has Made Its First Gan LEDs on 8 Inch Silicon Wafers
Apr 1, 2013CEA-Leti spin off Aledia, has made its first GaN LEDs on 8 inch (200mm) silicon wafers. The cost of Aledia’s LED 3D chips based on microwires is expected to be four times less than traditional planar (2D) LEDs. What's more, Aledia ...
Tags: LED 3D Chips, LED, LED chips
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Aledia Has Made Its First LEDs on 8-Inch (200mm) Silicon Wafers
Mar 28, 2013Aledia S.A. of Grenoble, France, which develops LEDs based on microwire GaN-on-silicon technology, has made its first LEDs on 8-inch (200mm) silicon wafers. The firm says that the cost of its 3D LED chips based on microwires is expected to ...
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Aledia Announced Today That It Has Made Its First LEDs on 8-Inch (200mm) Silicon Wafers
Mar 27, 2013Aledia, a developer of LEDs-based on disruptive microwire GaN-on-Silicon technology, announced today that it has made its first LEDs on 8-inch (200mm) silicon wafers. The cost of Aledia’s LED 3D chips based on microwires is expected ...
Tags: Aledia, LED, Silicon Wafers, Microwire Technology
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Luxtera's Silicon CMOS Photonics Technology Enables High-Performance
Mar 22, 2013Fabless silicon CMOS photonics firm Luxtera of Carlsbad, CA, USA is participating in the Optical Internetworking Forum’s (OIF) multi-vendor 4 x 25G chip-to-module interoperability demonstration at the Optical Fiber Communication ...
Tags: Luxtera, Silicon CMOS, Silicon photonics