UCSB

Tunnel Junction for Vertical-Cavity Surface-Emitting Laser

University of California Santa Barbara (UCSB) has developed an n-type gallium nitride (n-GaN) tunnel junction (TJ) intracavity contact to reduce threshold current and increase differential efficiency in its m-plane III-nitride ...

Tags: VCSEL, n-GaN, GaN substrates, MOCVD, MBE

UCSB in The USA Has Improved Hole Concentrations in p-GaN

University of California Santa Barbara (UCSB) in the USA has improved hole concentrations in p-type gallium nitride (p-GaN) by using indium as a surfactant in ammonia-based molecular beam epitaxy (NH3MBE) [Erin C. H. Kyle et al, Appl. Phys. ...

Tags: Gallium Nitride, Indium Surfactant

Semi-Polar InGaN Laser Diodes

University of California Santa Barbara (UCSB) has used indium tin oxide (ITO) as part of the cladding for semi-polar indium gallium nitride (InGaN) laser diodes (LDs) [A. Pourhashemi et al, Appl. Phys. Lett., vol106, p111105, 2015]. The ...

Tags: Indium, InGaN substrates, Electrical

Daniel Feezell Received a $500,000 US NSF Faculty Early CAREER Award

Daniel Feezell, an assistant professor in the University of New Mexico’s Department of Electrical and Computer Engineering, has received a $500,000 US National Science Foundation (NSF) Faculty Early Career Development (CAREER) award, ...

Tags: gallium nitride, Electrical

InGaN LEDs with Thicker Active Regions Enabled by on The Semi-Polar (30-3-1) Plane

University of California Santa Barbara (UCSB) and Mitsubishi Chemical Corp have reported indium gallium nitride (InGaN) light-emitting diodes (LEDs) with thicker active regions enabled by growing the crystal on the semi-polar (30-3-1) plane ...

Tags: Thicker InGaN, Semi-Polar Substrate

Aixtron Has Received The 'Award of Outstanding Achievement for Global SSL Development'

At the 11th China International Forum on Solid State Lighting (SSL CHINA 2014) in Guangzhou (6-8 November), deposition equipment maker Aixtron SE of Aachen, Germany has received the ‘Award of Outstanding Achievement for Global SSL ...

Tags: SSL CHINA 2014, deposition equipment, Electronics

UCSB Used PEC to Create 405nm-Wavelength Vertical-Cavity Surface-Emitting Lasers

University of California, Santa Barbara (UCSB) has used photo-electro-chemical etch (PEC) to create 405nm-wavelength vertical-cavity surface-emitting lasers (VCSELs) based on indium gallium nitride (InGaN) multiple quantum wells (MQWs) [C. ...

UCSB And NTU Have Been Optimizing Ammonia-Based MBE for GaN Growth

University of California Santa Barbara (UCSB) and National Taiwan University (NTU) have been optimizing ammonia-based molecular beam epitaxy (MBE) for gallium nitride (GaN) growth on a range of substrates [Erin C. H. Kyle et al, J. Appl. ...

Tags: GaN MBE Veeco, Electrical, Electronics

The Research Promises to Help Deliver Higher Semiconductor Performance

At the 2014 Symposium on VLSI Technology, University of California, Santa Barbara (UCSB) has reported what are claimed to be the highest-performing III-V metal-oxide semiconductor (MOS) field-effect transistors (FETs). The research ...

Tags: SRC InAs MOSFETs UCSB, Electrical, Electronics

UCSB Have Developed Wavelength INAS QD Lasers

University of California Santa Barbara (UCSB) and epiwafer foundry IQE Inc have developed 1.3μm-wavelength indium arsenide (InAs) quantum dot (QD) lasers grown on silicon (Si) with “record performance” [Alan Y. Liu et al, ...

Tags: Silicon, `Quantum Dot Lasers

UCSB Have Used Low-Temperature Metal-Organic Chemical Vapor Deposition

Researchers at University of California Santa Barbara (UCSB) have used low-temperature metal-organic chemical vapor deposition (MOCVD) of p-type gallium nitride (GaN) to achieve intentional surface roughening of a solar cell device, thereby ...

Tags: Ingan Solar Cell, MOCVD

UCSB Researchers Have Been Studying The Effect of Using Undoped Vertical Spacers

University of California Santa Barbara (UCSB) researchers have been studying the effect of using undoped vertical spacers in the source and drain contacts to reduce off-state leakage in indium arsenide (InAs)-channel ...

Tags: Electrical, Electronics, Mosfets