aluminium nitride articles & resources on Made-in-China.com

Aluminium Nitride Schottky Barrier Diodes with Breakdown More Than 1kv

Aug 3, 2017

Arizona State University (ASU) in the USA claims the first demonstration of 1kV-class aluminium nitride (AlN) Schottky barrier diodes (SBDs) [Houqiang Fu et al, IEEE Electron Device Letters, 5 July 2017]. AlN has a wide bandgap of 6.2eV. ...

Tags: semiconductor, MOCVD

Dowa Readies Mass Production of Highest-Output 280nm Deep UV LEDs

Jun 29, 2017

Dowa Holdings Co Ltd subsidiary Dowa Electronic Materials Co Ltd of Tokyo, Japan has developed a deep ultraviolet LED chip with dimensions of 1mm × 1mm and what is claimed to be the industry’s highest output power of 75mW at a ...

Tags: UV LED, LED chip

Indium Gallium Nitride Laser Diode Directly Integrated with Silicon

Sep 9, 2016

Researchers in China have achieved continuous wave (cw) lasing at room temperature for indium gallium nitride (InGaN) laser diodes (LDs) grown directly on silicon (Si) [Yi Sun et al, Nature Photonics, 10, p595, 2016]. The team from Suzhou ...

Tags: InGaN Laser diodes, cw, SINANO

University of Colorado Boulder Develops Method for Room-Temperature Atomic Layer Deposition

Sep 7, 2016

As part of the Local Control of Materials Synthesis (LoCo) program of the US Defense Advanced Research Projects Agency (DARPA), the University of Colorado, Boulder (CU) have developed the new electron-enhanced atomic layer deposition ...

Tags: EE-ALD, LoCo, DARPA

LayTec Adds Nanoscale SPC for Quaternary Films to Epinet 2016 Analysis Software

Jul 27, 2016

In its newsletters in April 2016 and June 2015 in-situ metrology system maker LayTec AG of Berlin, Germany reported on x-ray diffraction (XRD)-gauged nk database improvements for InGaAsP (indium gallium arsenide phosphide) and InGaAlAs ...

Tags: metrology system, x-ray diffraction

Kyma and Quora Partner on GaN Substrate Materials

Jun 23, 2016

Kyma Technologies Inc of Raleigh, NC, USA (which provides crystalline nitride materials, crystal growth and fabrication equipment, and power switching electronics) and Quora Technology Inc have announced a strategic partnership in the ...

Tags: Kyma technologies, GaN, Quora

Bluglass Reports Progress on Lumileds and Veeco Collaborations; First Iteration of HC Semitek Collaboration Begun

Jun 23, 2016

BluGlass Ltd of Silverwater, Australia – which was spun off from the III-nitride department of Macquarie University in 2005 to develop a low-temperature process using remote plasma chemical vapor deposition (RPCVD) to grow materials ...

Tags: BluGlass, RPCVD, LED

Speed up for Indium Gallium Nitride Two-Dimensional Electron Gas

Jun 20, 2016

Xidian University in China has used pulsed metal-organic chemical vapor deposition (MOCVD) to increase indium gallium nitride (InGaN) room-temperature channel mobility to 1681cm2/V-s, which is claimed to be a record [Yachao Zhang et al, ...

Tags: InGaN, AFM, MOCVD

Crystal IS Expands Optan SMD Product Line For Instrumentation With Higher-Output DUV LEDs

Mar 9, 2016

Crystal IS Inc of Green Island, NY, USA, an Asahi Kasei company that makes proprietary ultraviolet light-emitting diodes (UVC LEDs), has augmented its Optan SMD (surface-mount device) product line for instrumentation with the addition of ...

Tags: Crystal IS, UVC LEDs

Cambridge Nanotherm Presenting Nanoceramics for High-Power Packaged LEDs at Strategies in Light

Feb 14, 2016

At the Strategies in Light show in Santa Clara, CA, USA (1–3 March), Dr Giles Humpston, applications engineer at Cambridge Nanotherm Ltd of Haverhill, Suffolk UK, will outline how Nanotherm's thermal management technology can help LED ...

Tags: Packaged LEDs, LED industry

UV-LED Maker Crystal Is Receives ISO 9001: 2008 Certification

Dec 24, 2015

Crystal IS Inc of Green Island, NY, USA, an Asahi Kasei company that makes proprietary ultraviolet light-emitting diodes (UVC LEDs), is now ISO 9001:2008 certified. The firm's UVC LEDs are based on Crystal IS' proprietary native aluminium ...

Tags: Crystal IS, UVC LEDs, Electronics

Thinning Buffer Layers for GaN-on-Silicon Light-Emitting Diodes

Dec 2, 2015

Plessey Semiconductors Ltd in the UK has been improving its indium gallium nitride (InGaN)-on-silicon light-emitting diode (LED) technology [Liyang Zhang et al, Journal of the Electron Devices Society, vol3, p457, 2015]. A light output ...

Tags: GaN-on-silicon LEDs, Plessey MOCVD

Nanotherm Wins Elektra 'LED Lighting Product of The Year' Award

Nov 27, 2015

At the 2015 Elektra Awards ceremony at The Lancaster Hotel in London on 24 November, Cambridge Nanotherm Ltd of Haverhill, Suffolk UK, a producer of thermal management technology, has won the LED Lighting Product of the Year award (beating ...

Tags: Nanotherm, LED Lighting, 'Nanotherm DM'produc

II-VI Semiconductor Green Laser Diode Achieves Lower Current Threshold

Nov 9, 2015

Jijun Feng and Ryoichi Akimoto based in China and Japan have developed low-threshold green and green-yellow laser diodes (LDs) based on a beryllium zinc cadmium selenide (BeZnCdSe) quantum well [Appl. Phys. Lett., vol107, p161101, 2015]. ...

Tags: laser diodes, zirconium dioxide

SiC, GaN and Other Wider-Bandgap Materials Present New Choices for Power Electronics

Oct 19, 2015

When people think about wide-bandgap (WBG) semiconductor materials for power electronics applications, they usually think of gallium nitride (GaN) or silicon carbide (SiC) – which is not surprising, since SiC and GaN are currently the ...

Tags: Power Electronics, semiconductor, LED

aluminium nitride

Related Products