double gated nitride semiconductor

SINANO Extended Its Work on Double-Gated DG-HEMTs
Jun 8, 2013
Chinese Academy of Sciences’ Suzhou Institute of Nano-Tech and Nano-Bionics (SINANO) has extended its work on double-gated nitride semiconductor high-electron-mobility transistors (DG-HEMTs) [Guohao Yu et al, IEEE Electron Device ...

Tags: Nitride HEMTs, Electrical
SINANO Has Been Using Double-Gated Nitride Semiconductor HEMTs
Feb 6, 2013
Suzhou Institute of Nano-tech and Nano-bionics (SINANO) in China has been using double-gated nitride semiconductor high-electron-mobility transistors (HEMTs) to understand the effects of field-plates in improving dynamic performance [Guohao ...

Tags: SINANO, China, double-gated nitride semiconductor, HEMTs