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electron drift velocity
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Wolfspeed Launches 50V Plastic-Packaged GaN HEMTs for LTE & Radar
Oct 15, 2015Wolfspeed of Raleigh, NC, USA, a Cree Company that supplies gallium nitride on silicon carbide (GaN-on-SiC) high-electron-mobility transistors (HEMTs) and monolithic microwave integrated circuits (MMICs), has introduced two plastic-packaged ...
Tags: Wolfspeed, high-electron-mobility transistors, GaN HEMT devices
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CREE Introduced a 25W GaN MMIC for 6-12GHz Performance
Mar 16, 2015Cree Inc of Durham, NC, USA has introduced a 25W gallium nitride (GaN) monolithic microwave integrated circuit (MMIC) for 6–12GHz performance. Leveraging the inherent benefits of GaN technology, the new MMIC enables extremely wide ...
Tags: integrated circuit, GaN technology
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CREE Extended Family of 50V Discrete Gan Hemt Die with The Release of Three New Components
Jan 14, 2015Cree Inc of Durham, NC, USA, which makes silicon carbide (SiC) and gallium nitride (GaN) wafers and devices, recently extended its family of 50V discrete GaN high-electron-mobility transistor (HEMT) die with the release of three new ...
Tags: electron drift velocity, gallium arsenide technologies, Electrical
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USA Is Enhancing Its Support of The European Market by Extending Its Partnership with APC
Aug 22, 2014Cree Inc of Durham, NC, USA is enhancing its support of the European market by extending its partnership with UK-based distributor APC Novacom. APC Novacom now stocks all Cree RF devices that do not require a European Union (EU) license, ...
Tags: Cree, APC, Electrical