Taiwan’s National Cheng Kung University has developed near-green light-emitting diodes (LEDs) using a new indium gallium nitride (InGaN) growth process that gives devices with a higher peak external quantum efficiency of 48.6% ...
Tags: LEDs, Near-green LEDs, InGaN MOCVD
One problem in developing more efficient organic LED light bulbs and displays for TVs and phones is that much of the light is polarized in one direction and thus trapped within the LED. University of Utah physicists believe they have solved ...
The Chinese Academy of Sciences’ Research and Development Center for Semiconductor Lighting has been exploring the effect of p-type doping of the barriers in multiple quantum well blue-green (~500nm) light-emitting diode (LED) ...
Tags: Blue-Green LEDs, Electronics
When silica, soda and lime meet high heat, a beautiful alchemy occurs. The result — a taffy-like substance otherwise known as glass — has inspired creative minds for centuries. Artists and craftsmen today often combine ...
Tags: glass, Construction, Decoration
By blending their expertise, two materials science engineers at Washington University in St. Louis changed the electronic properties of new class of materials — just by exposing it to light. With funding from the Washington ...
Tags: Semiconductor, Metal
The patent-pending LED creates a more precise wavelength of UV light than today's commercially available UV LEDs, and runs at much lower voltages and is more compact than other experimental methods for creating precise wavelength UV light. ...
Tags: Ultraviolet LED
Asahi Kasei Microdevices Corporation and Kyushu University in Japan detectors based on indium antimonide (InSb) [Koichiro Ueno et al, Jpn. J. Appl. Phys., vol52, p092202, 2013]. The reshave developed room-temperature mid-infrared ...
Tags: Photodiode, Electrical, Electronics
Researchers from the universities of California Santa Barbara (UCSB) and of New Mexico (UNM) have demonstrated semipolar nitride semiconductor blue and green laser diodes (LDs) with part of the upper cladding replaced by indium tin oxide ...
Tags: Iii-Nitride Lasers, Electrical
Ohio State University is proposing the use of a newly developed tunnel junction as a means to ameliorate the effects of efficiency droop in nitride semiconductor light-emitting diodes (LEDs) and other optoelectronic devices [Fatih Akyol et ...
Tags: LED, Electrical, Electronics
Researchers in South Korea and USA have been developing graded-composition superlattice electron-blocking layers (GSL-EBLs) for nitride semiconductor light-emitting diodes (LEDs) [Jun Hyuk Park et al, Appl. Phys. Lett., vol103, p061104 ...
Tags: LED, droop GaN EBL, Electrical, Electronics, nitride semiconductor
Researchers based in the USA and Korea have found "an unequivocal correlation between the onset of high injection and the onset of the efficiency droop" of gallium indium nitride (GaInN) light-emitting diodes (LEDs) [David S. Meyaard et al, ...
Tags: LED, Nitride LED, Electrical, Electronics
According to reports, researchers at the Georgia Institute of Technology have developed a sensor device capturing signatures with tiny piezo-phototronic LEDs, that's to say, the device converts mechanical pressure from a signature or a ...
Tags: Sensor Device, Tiny LEDs
For most of us, a modern lifestyle without polymers is unthinkable…if only we knew what they were. The ordinary hardware-store terms we use for them include "plastics, polyethylene, epoxy resins, paints, adhesives, rubber" -- without ...
Researchers at the Georgia Institute of Technology want to put your signature up in lights – tiny lights, that is. Using thousands of nanometer-scale wires, the researchers have developed a sensor device that converts mechanical ...
Tags: Piezo-Phototronic Effect
Researchers in China and Turkey have been using varying-thickness gallium nitride (GaN) barriers between indium gallium nitride (InGaN) multiple quantum wells (MQWs) to improve hole distributions and thus to reduce efficiency droop effects ...
Tags: InGaN LEDs, Electrical, Electronics