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Researchers Have Developed a Band Engineering Technique

Aug 20, 2014

Researchers from Ohio State University (OSU) and University of California–Irvine (UCI) have developed a band engineering technique to improve the results from photo-electro-chemical (PEC) etch of nitride semiconductors [Prashanth ...

Tags: Photo-electro-chemical etch InGaN Kyma Veeco MBE

Researchers Have Used Strain to Alter The Light-Emitting Properties of GaAs

Apr 29, 2014

Researchers in Switzerland and Norway have used strain to alter the light-emitting properties of gallium arsenide (GaAs) nanowires [G. Signorello et al, Nature Communications, vol5, p3655, published online 10 Apr 2014]. The researchers from ...

Tags: Electrical, Electronics

The Impact of Using a Vertical Current Injection Structure Was Also Seen in a Higher EQE

Dec 25, 2012

The impact of using a vertical current injection structure was also seen in a higher external quantum effi- ciency (EQE) of 16.2% at 350mA, com- pared with 13.2% for the LLED. At 550mA, the VLED EQE fell 11.9%, com- pared with14.6% for the ...

Tags: LED

Researchers Have Created Graphene Nanoribbon Structures with Regions

Dec 11, 2012

Researchers based in the USA and France have created graphene nanoribbon structures with regions that have relatively large energy bandgaps of about 0.5eV [J. Hicks et al, Nature Physics, published online 18 November 2012]. Flat graphene ...

Tags: silicon carbide, graphene, nanoribbon structures, bandgaps, energy bands

energy bands

Researchers Have Developed a Band Engineering Technique

Researchers Have Used Strain to Alter The Light-Emitting Properties of GaAs

The Impact of Using a Vertical Current Injection Structure Was Also Seen in a Higher EQE

Researchers Have Created Graphene Nanoribbon Structures with Regions

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