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CREE Extended Family of 50V Discrete Gan Hemt Die with The Release of Three New Components
Jan 14, 2015Cree Inc of Durham, NC, USA, which makes silicon carbide (SiC) and gallium nitride (GaN) wafers and devices, recently extended its family of 50V discrete GaN high-electron-mobility transistor (HEMT) die with the release of three new ...
Tags: electron drift velocity, gallium arsenide technologies, Electrical