Based on its recent analysis of the gallium nitride (GaN)-based devices market, Frost & Sullivan has recognized Advantech Wireless of Montreal, Canada (which manufactures satellite, RF equipment and microwave systems) with the 2014 North ...
Tags: Wireless'GaN Devices, Electronics
Magnetic components and assembly designer and manufacturer Precision Inc of Minneapolis, MN, USA has launched its gallium nitride (GaN)-ready magnetic capabilities. GaN-ready LLC transformers and PFC inductors are now available for ...
Toshiba Electronics Europe of Düsseldorf, Germany (TEE, the European electronic components business of Tokyo-based Toshiba Corp) has extended its LETERAS family of white LEDs with a new series of ultra-compact devices that combine ...
Tags: Toshiba GaN-on-Si LEDs, Electrical, Electronics, LED
Spending on microwave RF power semiconductors will rise to more than $300m by 2019 as the availability of new gallium nitride (GaN) devices for 4-18GHz becomes more pervasive, according to the report 'Microwave RF Power Semiconductors' from ...
Tags: ABI RF power semiconductors GaN, Electrical, Electronics
Meijo and Nagoya universities in Japan have developed a laser lift-off (LLO) technique for removing gallium nitride (GaN) substrates from ultraviolet (UV) light-emitting diodes (LEDs) to improve light extraction efficiency [Daisuke Iida et ...
GaN Systems Inc of Ottawa, Ontario, Canada, a fabless developer of gallium nitride (GaN)-based power switching semiconductors for power conversion and control applications, has signed an exclusive worldwide distribution agreement with ...
Tags: GaN Systems, Power electronics
LED maker Changelight Co Ltd of Xiamen, China plans to issue 6.07 million stocks to raise a total of RMB800m ($130.39m) in financing in order to expand its production of indium gallium nitride (InGaN) LED epitaxial wafers, according to ...
Epitaxial deposition and process equipment maker Veeco Instruments Inc of Plainview, NY, USA has launched the TurboDisc EPIK700 gallium nitride (GaN) metal-organic chemical vapor deposition (MOCVD) system, which combines what are reckoned ...
Tags: Veeco MOCVD GaN HB-LEDs
Researchers in Singapore have reported high-frequency performance of gallium nitride (GaN) indium aluminium nitride (InAlN) high-electron-mobility transistors (HEMTs) on silicon substrates, including the first noise measurements [S. ...
Tags: Electrical, Electronics
Researchers in Japan and USA have claimed the first experimental demonstration of higher breakdown voltage for slant field-plate (FP) gallium nitride (GaN) high-electron-mobility transistors (HEMTs) over convention field-plate designs ...
Tags: GaN, HEMTs, Electronics
Deposition equipment maker Aixtron SE of Aachen, Germany says that Mitsubishi Electric Corp (MELCO) of Tokyo, Japan has begun operations with an AIX 2800G4 HT Planetary Reactor system. The 11x4”-wafer configuration metal-organic ...
Tags: Mitsubishi, GaN-on-Si, power amplifiers
M/A-COM Technology Solutions Inc of Lowell, MA, USA (which makes analog semiconductors, components and subassemblies for analog, RF, microwave and millimeter-wave applications) has launched a gallium nitride on silicon carbide (GaN-on-SiC) ...
Tags: M/A-COM, Transistor, Electrical
Transphorm Inc of Goleta, near Santa Barbara, CA, USA, which designs and provides gallium nitride (GaN)-based power conversion devices and modules for power supplies and adapters, motor drives, solar inverters and electric vehicles, is ...
Tags: Transphorm, Partner, Electrical
UK full-service energy-efficiency specialist SaveMoneyCutCarbon.com has announced a new partnership as Master Distributor for Soraa Inc of Fremont, CA, USA and its GaN-on-GaN (gallium nitride on gallium nitride) technology, which provides ...
Tags: Soraa, Distributor, Electrical
Efficient Power Conversion Corp (EPC) of El Segundo, CA, USA, which makes enhancement-mode gallium nitride on silicon (eGaN) power field-effect transistors (FETs) for power management applications, says that, on 3 September (at 11am-12pm ...