- Location
growth parameters
"-
Solar-Tectic Granted US Patent for Low-Cost, High-Efficiency III-V Thin-Film Tandem Solar Cell on Glass Substrate
Oct 10, 2017Solar-Tectic LLC of Briarcliff Manor, NY, USA says that the US Patent and Trademark Office has granted it US patent 15/205,316 ‘Method of Growing III-V Semiconductor Films for Tandem Solar Cells’ for high-efficiency and ...
Tags: Thin-film PV, Glass Substrate
-
IQE Equips Complete Fab with Laytec Tools for Mocvd Process Monitoring
Jun 15, 2016In-situ metrology system maker LayTec AG of Berlin, Germany says that epiwafer foundry and substrate maker IQE plc of Cardiff, Wales, UK has purchased a large number of its latest metrology systems for fab-wide metal-organic chemical vapor ...
-
HexaTech Accquires Energy Funding from DOE
Nov 13, 2015HexaTech Inc. announced today that it has received a continuation of funding under the U.S. Department of Energy's Advanced Research Projects Agency (ARPA-E) development program. The cost-share extension is valued at $1.2 million over 1 ...
Tags: HexaTech, AlN, semiconductor
-
K-Space and CNSE Announced a Joint Collaborative Effort in III-Nitride Materials Research
Jan 19, 2015k-Space Associates Inc of Dexter, MI, USA (which supplies instrumentation and software for surface science and thin-film technology applications) and the Colleges of Nanoscale Science and Engineering (CNSE) at SUNY Polytechnic Institute ...
Tags: III-nitride materials research, growth parameters, Electrical
-
Researchers in USA and Saudi Arabia Explored The Use of VdWE to Grow GaAs On Silicon
Sep 10, 2014Researchers in USA and Saudi Arabia have been exploring the potential of using 'van der Waals epitaxy' (vdWE) to grow gallium arsenide (GaAs) on silicon [Yazeed Alaskar et al, Adv. Funct. Mater., published online 26 August 2014]. The team ...
-
InGaN Is an Important Optoelectronic Material Capable of Producing Diodes
Feb 26, 2013Researchers in Spain have grown high-indium-content indium gallium nitride (InGaN) directly on silicon (Si) substrates [Praveen Kumar et al, Appl. Phys. Express, vol6, p035501, 2013]. The work was carried out at Universidad ...
Tags: InGaN, silicon, Optoelectronics, Microtechnology
-
GaN on Silicon(001) HEMT Growth Aided by Laytec's Epicurve TT
Dec 17, 2012LayTec AG of Berlin, Germany (which makes in-situ metrology systems for thin-film processes, focusing on compound semiconductor and photovoltaic applications) says that at last October’s International Workshop on Nitride ...
Tags: LayTec AG, metrology systems, HEMT
-
The Epitaxial Structures Were Grown on 100mm Diameter High-Resistivity
Sep 10, 2012Singapore’s Nanyang Technological University has made a first demonstration of nitride semiconductor high electron mobility transistors (HEMT) grown on silicon substrates using ammonia molecular beam epitaxy (MBE) rather than the ...
Tags: Singapore, Technological University, electron mobility transistors
