VisIC Technologies Ltd of Rehovot, Israel, a fabless developer of power conversion devices based on gallium nitride (GaN) metail-insulator-semiconductor high-electron-mobility transistors (MISHEMTs) founded in 2010, has unveiled what it ...
Tags: GaN-on-Si, power transistor
Plextek RF Integration of Great Chesterford, near Cambridge, UK, which designs and develops RFICs, MMICs and microwave/millimeter-wave modules, says that its CEO Liam Devlin is presenting the paper 'Designing GaN PA MMICs' in the Microwave, ...
Tags: Plextek, Microwave Circuit
Microsanj LLC of Santa Clara, CA, USA - a supplier of high-resolution, thermoreflectance imaging analysis (TIA) c, tools and consulting services - participated in three conferences during Microwave Week in Phoenix, Arizona. At the 2015 ...
Tags: TIA system, thermal imaging system
At PCIM (Power Conversion Intelligent Motion) Europe 2015 in Nuremberg, Germany (19-21 May), ON Semiconductor of Phoenix, AZ, USA (which supplies silicon-based power and signal management, logic, discrete and custom devices for ...
Cree Inc of Durham, NC, USA has introduced a 25W gallium nitride (GaN) monolithic microwave integrated circuit (MMIC) for 6–12GHz performance. Leveraging the inherent benefits of GaN technology, the new MMIC enables extremely wide ...
Tags: integrated circuit, GaN technology
Researchers in Germany have developed gallium nitride (GaN) high-electron-mobility transistors (HEMTs) on silicon carbide (SiC) layers on silicon wafers [Wael Jatal et al, IEEE Electron Device Letters, published online 11 December 2014]. ...
Tags: Cubic Silicon Carbide, Electrical
China’s Xidian University has been developing III-nitride double heterostructures (DHs) with indium gallium nitride (InGaN) channels with a view to high-electron-mobility transistors (HEMTs) [Yi Zhao et al, Appl. Phys. Lett., vol105, ...
Tags: HEMTs, InGaN channels
NTT Basic Research Laboratories in Japan has used a hexagonal boron nitride (h-BN) layer to release and transfer gallium nitride (GaN) high-electron-mobility transistors (HEMTs) from sapphire substrate to thermally conducting copper, ...
Tags: Boron Nitride, GaN Transistors
Based on its recent analysis of the gallium nitride (GaN)-based devices market, Frost & Sullivan has recognized Advantech Wireless of Montreal, Canada (which manufactures satellite, RF equipment and microwave systems) with the 2014 North ...
Tags: Wireless'GaN Devices, Electronics
Researchers in Singapore have reported high-frequency performance of gallium nitride (GaN) indium aluminium nitride (InAlN) high-electron-mobility transistors (HEMTs) on silicon substrates, including the first noise measurements [S. ...
Tags: Electrical, Electronics
Researchers in Japan and USA have claimed the first experimental demonstration of higher breakdown voltage for slant field-plate (FP) gallium nitride (GaN) high-electron-mobility transistors (HEMTs) over convention field-plate designs ...
Tags: GaN, HEMTs, Electronics
Researchers in Taiwan have applied a non-vacuum process to deposit aluminium oxide (Al2O3) passivation for nitride semiconductor high-electron-mobility transistors (HEMTs) [Bo-Yi Chou et al, IEEE Electron Device Letters, published online 11 ...
Tags: Electrical, Electronics, Transistor
Under the leadership of the European Defence Agency (EDA), the multi-national R&D project MANGA (Manufacturable GaN-SiC-substrates and GaN epitaxial wafers supply chain) says that it has succeeded in implementing a supply chain for the ...
Tags: GaN Technologies, HEMT structures, electronics components
Researchers in Taiwan claim to be the first to use bumping technology to create piezoelectric-induced performance enhancement in flip-chip packaged aluminium gallium nitride (AlGaN) high-electron-mobility transistors (HEMTs) [Szu-Ping Tsai ...
Cree Inc of Durham, NC, USA has introduced what it claims are the industry’s highest-power continuous wave (CW) RF gallium nitride (GaN) high-electron-mobility transistors (HEMTs) packaged in a dual-flat no-leads (DFN) format. ...
Tags: GaN Transistors, CREE