- Location
insulated gate bipolar transistors
"-
Microsemi Awarded Contract to Speed Adoption of SiC Technology as New Member of PowerAmerica
Aug 23, 2017Microsemi Corp of Aliso Viejo, CA, USA (which makes chips for aerospace & defense, communications, data-center and industrial markets) has become a member of PowerAmerica — a manufacturing institute consisting of public and private ...
-
NCSU's Freedm Systems Center Develops Low-Cost SiC High-Voltage Switch
Oct 12, 2016Researchers at North Carolina State University (NCSU) have created a high-voltage and high-frequency silicon carbide (SiC) power switch that could cost much less than similarly rated SiC power switches, it is reckoned. The findings could ...
-
Bi-Directional Silicon Carbide Planar Insulated-Gate Bipolar Transistor
Jul 5, 2016Rensselaer Polytechnic Institute and General Electric Global Research Center in the USA "experimentally demonstrate, for the first time, bi-directional 4H-silicon carbide planar gate, insulated-gate bipolar transistors (IGBTs) fabricated on ...
Tags: Bipolar Transistor
-
Hybrid III-Nitride and Silicon Carbide High-Voltage Power Transistors
Jun 21, 2016Researchers at Hong Kong University of Science and Technology (HKUST) are proposing using III-nitride and silicon carbide (SiC) hybrid technologies for high-voltage power devices [Jin Wei et al, IEEE Transactions on Electron Devices, vol63, ...
-
China to Spur Power Device Developments in 2016
Mar 24, 2016Market sectors encompassing telecommunications, consumer electronics, innovative energy applications in transportation, electricity generation and other market sectors are increasingly valuing power semiconductor devices as usage of these ...
Tags: AC driver, railway applications, high power
-
Monolith Demonstrating Fast-Switching SiC MOSFETs At APEC
Mar 16, 2016In booth 1655 at the Applied Power Electronics Conference & Exposition (APEC 2016) in Long Beach, CA, USA (20–24 March), Monolith Semiconductor Inc of Round Rock, TX, USA is demonstrating its fast-switching silicon carbide (SiC) ...
Tags: SiC MOSFET, SiC Schottky barrier diodes, SiC power devices
-
GaN and SiC Power Semiconductor Market to Surpass $1bn in 2020 Then $3.7bn in 2025
Mar 13, 2016Energized by demand from hybrid and electric vehicles, power supplies and photovoltaic (PV) inverters, the emerging global market for silicon carbide (SiC) and gallium nitride (GaN) power semiconductors will rise from just $210m in 2015 to ...
Tags: Semiconductor Market, GaN, SiC
-
Increasing Carrier Lifetimes for High-Voltage Silicon Carbide
Sep 15, 2015Researchers in Japan have been developing ways to increase minority carrier lifetimes in lightly doped silicon carbide (SiC) with a view to insulated-gate bipolar transistors (IGBTs) [Tetsuya Miyazawa et al, J. Appl. Phys., vol118, p085702, ...
-
Richard Eden Attended The Recent PCIM Europe 2015 Tradeshow in Germany
Jun 16, 2015Richard Eden, senior analyst (Power Semiconductors) at market research firm IHS Technology, attended the recent PCIM (Power Conversion Intelligent Motion) Europe 2015 tradeshow in Nuremberg, Germany (19-21 May), and in a Research Note has ...
Tags: GaN SiC, Power electronics
-
Girvan Patterson Presented a Paper 'the Automotive Market Opportunity for Gan'
May 26, 2015At the Power Conversion Intelligent Motion (PCIM) Europe 2015 event in Nurnberg, Germany (19-21 May), president Girvan Patterson of GaN Systems Inc in Ottawa, Ontario, Canada - a fabless developer of gallium nitride (GaN)-based power ...
-
SiC & GaN Power Semiconductors Market Rises 17-Fold to $2.5bn in 2023
Apr 3, 2015Energized by growing demand for power supplies, hybrid and electric vehicles, photovoltaic (PV) inverters and other established applications, the emerging global market for silicon carbide and gallium nitride power semiconductors will grow ...
Tags: GaN SiC Power electronics, power supplies, Electronics
-
Power Semiconductor Device Market Rose by 8.4% to $11.5bn in 2014
Mar 5, 2015After two tough years of stagnation, in 2014 the power semiconductor device market returned to growth, rising by 8.4% to $11.5bn, according to the report 'Status of the Power Electronics Industry (February 2015 edition)' from Yole ...
-
CREE Introduced a New Mosfet Design Kit
Jan 8, 2015Cree Inc of Durham, NC, USA, which makes silicon carbide (SiC) power devices, has introduced a new MOSFET design kit that includes all of the components needed to evaluate Cree MOSFET and Schottky diode performance in a configurable ...
Tags: configurable half-bridge circuit, MOSFET design, Electrical
-
GaN Systems Is Exhibiting in Booth 9-523 at PCIM
May 15, 2014GaN Systems Inc of Ottawa, Ontario, Canada, a fabless developer of gallium nitride (GaN)-based power switching semiconductors for power conversion and control applications, is exhibiting in booth 9-523 at PCIM (Power Conversion Intelligent ...
Tags: GaN Systems, High-Current Devices
-
Dow Corning Corp Introduced a Product Grading Structure for SiC Crystal Quality
May 13, 2014Dow Corning Corp of Midland, MI, USA, which provides silicon and wide-bandgap semiconductor technology, has introduced a product grading structure for silicon carbide (SiC) crystal quality that specifies new tolerances on killer device ...
Related Products
-
IRG4BC30UD TO-220AB 600V 12A insulated gate bipolar transistor with ultrafast soft recovery diode ultrafast copack IGBT
-
Igbts (Insulated Gate Bipolar Transistors) of Ma450b17e6K4 in Stock
-
Original Brand Ma600b12e6K4_D2 IGBT Insulated Gate Bipolar Transistor Integrated Circuit in Stock
-
Igbts (Insulated Gate Bipolar Transistors) of Ma600b12e6K4_D2 in Stock
-
50A 650V Trenchstop Insulated Gate Bipolar Transistor G50t65ds to-247s
-
20A 650V Trenchstop Insulated Gate Bipolar Transistor Dge20f65m2 to-263-3L
