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Veeco Reports Higher-Than-Expected Q2 Profits, Despite Falling Revenue From Sales of Blue LED MOCVD Systems to China
Aug 8, 2018For second-quarter 2018, epitaxial deposition and process equipment maker Veeco Instruments Inc of Plainview, NY, USA has reported revenue of $157.8m, down slightly on $158.6m last quarter but up 40.6% on $112.2m a year ago. ...
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Fogg Filler Launches New Enclosure for Filling and Rinsing Machines
Dec 4, 2017Rotary filling systems producer Fogg Filler has introduced new enclosure, which can be used on all filling and rinsing machines. The new enclosure features stainless steel door frames, which enables to monitor the rinsing and filling ...
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NRL Demonstrates Growth of Thin-Film Niobium Nitride
Jul 7, 2017The US Naval Research Laboratory (NRL) has demonstrated the ability to grow thin films of the transition-metal nitride Nb2N (niobium nitride). The thin crystalline material has a similar structure to gallium nitride (GaN), but its ...
Tags: Thin-Film Niobium Nitride, LED
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Reducing Subthreshold Swing of Gallium Arsenide Transistors
Sep 28, 2016Korea Institute of Science and Technology (KIST) claims a record low subthreshold swing of 68mV/decade for a gallium arsenide (GaAs) field-effect transistor (FET) [SangHyeon Kim et al, IEEE Electron Device Letters, published online 24 ...
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Boosting Transconductance in Indium Gallium Arsenide finFETs
Sep 6, 2016Researchers at Massachusetts Institute of Technology (MIT) in the USA have claimed record transconductance for III-V fin field-effect transistors (finFETs) when normalized according to fin width [Alon Vardi and Jesús A. del Alamo, ...
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Wafer Reclaim for Indium Gallium Aluminium Phosphide Light Emission
Aug 19, 2016Researchers in Germany have been developing an epitaxial lift-off (ELO) process that would allow gallium arsenide (GaAs) substrates to be reused for indium gallium aluminium phosphide (InGaAlP) thin-film light-emitting diode (LED) ...
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Chemical Lift-off of Full-Wafer Gallium Nitride with Zinc Oxide Interlayer
Aug 10, 2016Researchers based in UK, France, Australia and the USA have developed a chemical epitaxial lift-off (ELO) technique for full 2-inch-diameter gallium nitride (GaN) grown on sapphire and free-standing substrates [Akhil Rajan et al, J. Phys. ...
Tags: GaN, HVPE, free-standing wafers
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ClassOne Reports Ten-Fold Saving in Gold Usage Using Multi-Chamber Plating System
Jun 3, 2016ClassOne Technology of Kalispell, MT, USA, which manufactures wet-chemical processing equipment including Solstice electroplating systems (especially for emerging markets and other cost-conscious users of ≤200mm substrates), is reporting ...
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China to Spur Power Device Developments in 2016
Mar 24, 2016Market sectors encompassing telecommunications, consumer electronics, innovative energy applications in transportation, electricity generation and other market sectors are increasingly valuing power semiconductor devices as usage of these ...
Tags: AC driver, railway applications, high power
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TRUMPF Photonics Buys Classone Electroplater for Gold Plating and Metal Lift-off
Nov 18, 2015ClassOne Technology of Kalispell, MT, USA, which manufactures wet-chemical processing equipment (especially for emerging markets and other cost-conscious users of ≤200mm substrates), has sold a Solstice S8 plating system to semiconductor ...
Tags: ClassOne, TRUMPF, Gold Plating
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Blanks/USA Has Launched Lift off Die Cut Paper Product Lineup
Jul 13, 2015Blanks/USA has launched Lift Off die cut paper product lineup that is print-ready and provides durability during assembly. A breakaway from the industry standard perforated formats prone to accidental ripping or tearing, the new product ...
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Stanford Awards Eight Seed Grants Totaling $1.5m for New Research in Clean Technology
Dec 17, 2014Stanford University's Precourt Institute for Energy, the Precourt Energy Efficiency Center and the TomKat Center for Sustainable Energy have awarded eight seed grants totaling about $1.5m for new research in clean technology and energy ...
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China Engineered Gallium Vacancy Defects in Gan to Create Color Tunable Emitting Diodes
Oct 14, 2014Xi’an Jiaotong University and Shaanxi Supernova Lighting Technology Co., Ltd., of China have used silver nanorods to engineer gallium vacancy defects in gallium nitride (GaN) to create color tunable light emitting diodes [Yaping Huang ...
Tags: GaN, LEDs, LED heterostructure
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LLO Technique for Removing GaN Aims to Improve Light Extraction Efficiency
Sep 9, 2014Meijo and Nagoya universities in Japan have developed a laser lift-off (LLO) technique for removing gallium nitride (GaN) substrates from ultraviolet (UV) light-emitting diodes (LEDs) to improve light extraction efficiency [Daisuke Iida et ...
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Materials Unveiled The Temescal UEFC-4900
Jun 4, 2014Materials, component and precision system supplier Ferrotec Corp, whose Temescal division of Livermore, CA, USA manufactures electron-beam-based evaporative coating systems, has unveiled the Temescal UEFC-4900, a mid-sized ...
Tags: Ferrotec, MID-Sized Auratus
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