Fabless semiconductor firm RFaxis Inc of Irvine, CA, USA, which designs RF semiconductors and embedded antenna solutions for the wireless connectivity and cellular mobility markets, has begun volume production of RFX8422S, which is claimed ...
Tags: Electrical, Electronics
M/A-COM Technology Solutions Inc of Lowell, MA, USA (which makes analog semiconductors, components and subassemblies) has introduced a new integrated SPDT switch and Low Noise Amplifier (LNA), with bypass mode, for WLAN 802.11a,n,ac network ...
Tags: M/A-COM, SPDT Switch, LNA
Custom MMIC of Westford, MA, USA has added the CMD190 to its growing monolithic microwave integrated circuit (MMIC) library of standard products. The CMD190 is a highly efficient gallium arsenide (GaAs) MMIC ultra-low-noise amplifier for ...
Tags: Custom MMIC LNA, Electrical, Electronics
The UK's University of Manchester has used band engineering on indium phosphide (InP) to create indium gallium arsenide (InGaAs) pseudomorphic high-electron-mobility transistors (pHEMTs) with reduced gate current leakage and high breakdown ...
Tags: Barriers
GaAs-based broadband wireless and wireline communications component maker Anadigics Inc of Warren, NJ, USA is shipping production volumes of its AWL9280 and AWL9580 WiFi front-end ICs (FEICs) to Samsung Electronics for the new Galaxy Tab 3 ...
Tags: Samsung, Electrical, Electronics
RF front-end component maker and foundry services provider TriQuint Semiconductor Inc of Hillsboro, OR, USA reflected on its role in helping land NASA's Curiosity rover safely on Mars as program managers say the mission is reaching a key ...
Tags: Electrical, Electronics
GaAs-based broadband wireless and wireline communications component maker Anadigics Inc of Warren, NJ, USA says that its AWL9281 and AWL9581 WiFi front-end integrated circuits (FEICs) have been selected for use with the industry’s ...
Tags: Anadigics, Wifi Feics
Freescale Semiconductor of Austin, TX, USA, which provides RF power technology for cellular markets, has introduced an enhancement-mode pseudomorphic high-electron-mobility transistor (pHEMT) low-noise amplifier (LNA) based on GaAs process ...
Monolithic microwave integrated circuit developer Custom MMIC of Westford, MA, USA has added the CMD185P3 low-noise amplifier to its expanding line of standard amplifier products. The CMD185P3 has a low noise figure of 1.9dB and ...
Tags: Custom MMIC, Noise Figure
GaAs-based broadband wireless and wireline communications component maker Anadigics Inc of Warren, NJ, USA says that its AWL9581 802.11ac front-end IC (FEIC), AWT6651 ProEficient power amplifier (PA), AWT6624 HELP4 PA, and AWC6323 HELP3E ...
Skyworks Solutions Inc of Woburn, MA, USA (which manufactures high-reliability analog and mixed-signal semiconductors) says it is supporting Samsung’s Galaxy S 4 smartphone platforms with multiple high-performance analog and front-end ...
Tags: Skyworks, Samsung Galaxy
Electronic component distributor Richardson RFPD Inc (an Arrow Electronics Company) of LaFox, IL, USA has introduced a new 0.7-3.8GHz ultra-low-noise amplifier made by Skyworks Solutions Inc of Woburn, MA, USA. The SKY67151-396LF is a ...
Tags: Richardson RFPD, Electronics
Germany’s Infineon Technologies AG has introduced a new silicon germanium (SiGe) based transceiver family to address the market for wireless data links with data rates of more than 1Gbps between LTE/4G base stations and core networks. ...
Tags: Infineon, SiGe Transceivers
GaAs-based broadband wireless and wireline communications component maker Anadigics Inc of Warren, NJ, USA says that its AWL9581 front-end integrated circuit (FEIC) is being used in the latest WiFi module of Murata Manufacturing Company Ltd ...
Tags: Murata, Front-End IC, WiFi Module
In conjunction with the 2013 Government Microcircuit Applications and Critical Technology conference (GOMACTech 13) in Las Vegas (11-14 March), RF front-end component maker and foundry services provider TriQuint Semiconductor Inc of ...
Tags: TriQuint, GaN Ku-Band PA, Broadband Integrated Limiter/LNA