metal oxide semiconductor articles & resources on Made-in-China.com

Suny Poly Professor Awarded $750, 000 by DOE to Develop More Efficient, Cost-Effective SiC Power Electronics Chips

Sep 26, 2017

State University of New York (SUNY) Polytechnic Institute says that associate professor of nanoengineering Dr Woongje Sung has been selected to receive $750,000 in federal funding from the US Department of Energy (DOE) to develop silicon ...

Tags: Power Electronics Chips, Suny Poly

Mitsubishi Electric Develops SiC Mosfet with Record Power Efficiency for 1200V-Class Power Device

Sep 25, 2017

At the International Conference on Silicon Carbide and Related Materials (ICSCRM 2017) in Washington DC (17-22 September), Tokyo-based Mitsubishi Electric Corp unveiled a silicon carbide (SiC) metal-oxide-semiconductor field-effect ...

Tags: Power Device, Mitsubishi, SiC Mosfet

SDK Expanding High-Grade SiC EPI Production Capacity From 3000 to 5000 Wafers Per Month

Sep 18, 2017

Tokyo-based Showa Denko K.K. (SDK) has decided to expand its facilities for producing high-quality-grade silicon carbide (SiC) epitaxial wafers for power devices - which have already been marketed under the trade name High-Grade Epi (HGE) - ...

Tags: SiC power devices, semiconductors

Analog Devices Launches Small Isolated Gate Drivers for SiCand GaN Power Switch Technology

May 25, 2017

Analog Devices Inc (ADI) of Norwood, MA, USA has launched small-form-factor isolated gate drivers designed for the higher switching speeds and system size constraints required by power switch technologies such as silicon carbide (SiC) and ...

Tags: Analog Devices, GaN Power

Rohm Expands Full-SiC Power Module Lineup

May 23, 2017

Japan’s ROHM Semiconductor has developed 1200V 400A/600A-rated full-silicon carbide (SiC) power modules [BSM400D12P3G002/BSM600D12P3G001] - available in June (for samples and OEM quantities) - optimized for inverters and converters in ...

Tags: power modules, Semiconductor

Indium Gallium Arsenide Quantum Well Transistors on 300mm Silicon

May 18, 2017

Researchers in South Korea and the USA claim record 2190cm2/V-s effective mobility for indium gallium arsenide (InGaAs) quantum well (QW) metal-oxide-semiconductor field-effect transistors (MOSFETs) on 300mm-diameter (100) silicon ...

Tags: Transistors, MOSFETs

Power Amplifier Market Growing at CAGR of Nearly 14% to 2020

Oct 8, 2016

The global power amplifier market will increase at a compound annual growth rate (CAGR) of nearly 14% from 2016-2020, according to a report from Technavio that provides an analysis of the most important trends expected to impact the market. ...

Tags: power amplifier, CAGR

Reducing Subthreshold Swing of Gallium Arsenide Transistors

Sep 28, 2016

Korea Institute of Science and Technology (KIST) claims a record low subthreshold swing of 68mV/decade for a gallium arsenide (GaAs) field-effect transistor (FET) [SangHyeon Kim et al, IEEE Electron Device Letters, published online 24 ...

Tags: KIST, GaAs, FET

Boosting Transconductance in Indium Gallium Arsenide finFETs

Sep 6, 2016

Researchers at Massachusetts Institute of Technology (MIT) in the USA have claimed record transconductance for III-V fin field-effect transistors (finFETs) when normalized according to fin width [Alon Vardi and Jesús A. del Alamo, ...

Tags: MIT, finFETs

Mitsubishi Electric Launches Super-Mini Full-Sic Dipipm for Air Conditioners

Aug 19, 2016

Tokyo-based Mitsubishi Electric Corp has launched the new PSF15S92F6 15A/600V transfer-mold power semiconductor model in its lineup of super-mini dual-in-line package intelligent power modules (DIPIPM), with embedded silicon carbide ...

Tags: DIPIPM, Mitsubishi Electric Corp, SiC-MOSFETs

Rohm Launches 1700V SiC Mosfet

Jul 12, 2016

Japan's Rohm Semiconductor has announced the availability of a new 1700V silicon carbide (SiC) metal-oxide-semiconductor field-effect transistor (MOSFET) optimized for industrial applications, including manufacturing equipment and ...

Tags: SiC, MOSFET, manufacturing equipment

Bi-Directional Silicon Carbide Planar Insulated-Gate Bipolar Transistor

Jul 5, 2016

Rensselaer Polytechnic Institute and General Electric Global Research Center in the USA "experimentally demonstrate, for the first time, bi-directional 4H-silicon carbide planar gate, insulated-gate bipolar transistors (IGBTs) fabricated on ...

Tags: Bipolar Transistor

Hybrid III-Nitride and Silicon Carbide High-Voltage Power Transistors

Jun 21, 2016

Researchers at Hong Kong University of Science and Technology (HKUST) are proposing using III-nitride and silicon carbide (SiC) hybrid technologies for high-voltage power devices [Jin Wei et al, IEEE Transactions on Electron Devices, vol63, ...

Tags: SiC, MOSFET, AlGaN

Purdue Develops SOI CMOS Power Amplifier for 5G Cell Phones and Next-Generation Radar

May 20, 2016

A new highly efficient power amplifier (PA) based on silicon-on-insulator (SOI) CMOS could help to make possible next-generation cell phones, low-cost collision-avoidance radar for cars and lightweight microsatellites for communications, ...

Tags: Power Amplifier, Cell Phones

ACCO Raises $35m in Funding Round LED by Bpifrance

Apr 19, 2016

ACCO Semiconductor Inc of Sunnyvale, CA, USA, a fabless provider of RF front-end components manufactured using standard high-volume bulk CMOS processes for smart-phone and Internet of Things (IoT) applications, has closed a $35m funding ...

Tags: CMOS PAs GaAs PAs

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