Brolis Semiconductors Ltd of Vilnius,Lithuania has won the Young Entrepreneur of the Year category at the Swedish Business Awards 2012.Established by brothers Augustinas Vizbaras,Kristijonas Vizbaras and Dominykas Vizbaras in 2011,the firm ...
Tags: MBE, Epitaxial wafers, Laser diodes, Semiconductors
17 September 2012 Arsenide nanowires on graphite and graphene Researchers at Norwegian University of Science and Technology(NTNU)have succeeded in growing gallium arsenide(GaAs)and indium arsenide(InAs)compound semiconductor crystal ...
Tags: GaAs Nanowires, Solar Cells LEDs, Graphitic Substrates, Graphene
Epiwafer foundry and substrate maker IQE plc of Cardiff, Wales, UK says it has achieved several key technology transfer milestones representing significant progress in its commercial relationship with Solar Junction of San Jose, CA, USA, ...
Tags: IQE, CPV, Solar Junction, commercial relationship, transfer milestones
Researchers based in France and Germany have developed techniques for growing indium arsenide (InAs) channel structures on silicon [L. Desplanque et al, Appl. Phys. Lett., vol101, p142111, 2012]. Room-temperature mobility for the epitaxial ...
Tags: growing indium arsenide, InAs, chemicals
Singapore researchers have developed high-mobility III-V indium gallium arsenide (InGaAs) channel n-type metal-oxide-semiconductor field-effect transistors (n-MOSFET) on germanium-on-insulator (GeOI) substrates [Ivana et al, Appl. Phys. ...
Tags: n-MOSFETs, metal-oxide-semiconductor, semiconductor, transistors
Brolis Semiconductors Ltd of Vilnius, Lithuania is to launch a new facility on 5 December 2012. Established by brothers Augustinas Vizbaras, Kristijonas Vizbaras and Dominykas Vizbaras in 2011, the firm specializes in mid-infrared type-I ...
Tags: MBE Epitaxial wafers, Laser diodes, Brolis Semiconductors
Brolis Semiconductors Ltd. and Veeco Instruments Inc. (Nasdaq: VECO) announced today that Brolis has received shipment of a Veeco GEN200® Edge™ Molecular Beam Epitaxy (MBE) production system for installation at their new epitaxial ...
Tags: Brolis Semiconductors, MBE systems, Veeco
Brolis Semiconductors Ltd of Vilnius, Lithuania says it has received shipment of a Veeco GEN200 Edge molecular beam epitaxy (MBE) production system from Veeco Instruments Inc of Plainview, NY, USA. The system will be installed at Brolis' ...
For the first nine months of 2012(to the end of September),Riber S.A.of Bezons,France,which manufactures molecular beam epitaxy(MBE)systems as well as evaporation sources and effusion cells,has reported revenue of€16.7m,down ...
For first-half 2012,Riber S.A.of Bezons,France,which manufactures molecular beam epitaxy(MBE)systems as well as evaporation sources and effusion cells,has reported gross profit(before changes in provisions for inventories)of€3m(gross ...
NTNU researchers have patented and are commercializing GaAs nanowires grown on graphene,a hybrid material with competitive properties.Semiconductors grown on graphene are expected to become the basis for new types of device systems,and ...
Singapore’s Nanyang Technological University has made a first demonstration of nitride semiconductor high electron mobility transistors (HEMT) grown on silicon substrates using ammonia molecular beam epitaxy (MBE) rather than the ...
Tags: Singapore, Technological University, electron mobility transistors
CrayoNano of Norway has grown GaAs nanowires on graphene, a patented hybrid material with competitive optoelectronic properties. "We have managed to combine low cost, transparency and flexibility in our new electrode," says Professor ...
Tags: Norwegians, Grow Gaas, graphene
4 September 2012 SITP orders Riber Compact 21 MBE system Riber S.A.of Bezons,France,which manufactures molecular beam epitaxy(MBE)systems as well as evaporation sources and effusion cells,has received an order for a Compact 21 MBE machine ...
Tags: SITP, MBE system, France, manufacture
The US National Science Foundation(NSF)has awarded Rochester Institute of Technology(RIT) 1.2million dollars to develop,fabricate and test a new family of infrared detectors grown on silicon substrates by Raytheon Visions Systems(RVS)of ...
Tags: The US National Science Foundation, Rochester Institute of Technology