Researchers in Japan have been developing planarization techniques for gallium nitride (GaN) surfaces [Shun Sadakuni et al, Jpn. J. Appl. Phys., vol52, p036504, 2013]. The researchers from Osaka University, Ritsumeikan University and Ebara ...
A team at Massachusetts Institute of Technology has developed an etch stop technique to improve performance of recessed-gate nitride semiconductor metal-insulator-semiconductor field-effect transistors (MISFETs) [Bin Lu et al, IEEE Electron ...
Tags: GaN MISFET GaN MOCVD, Electronics, Etch
University of Notre Dame (UND) in the USA and epiwafer maker IQE have claimed record-breaking balanced frequency performance for a nitride semiconductor high-electron-mobility transistor (HEMT) using indium aluminium gallium nitride ...
NTT Basic Research Laboratories in Japan has used hexagonal boron nitride (h-BN) layers to release nitride semiconductor light-emitting diodes (LEDs) from sapphire and transfer them to commercially available adhesive tape [Toshiki Makimoto ...
Tags: LED
Researchers from GLOBALFOUNDRIES, SEMATECH, and Massachusetts Institute of Technology (MIT) have extended their indium arsenide quantum well metal-oxide-semiconductor field-effect transistor (InAs QW MOSFET) technology to some of the ...
Taiwan researchers have used a self-textured oxide mask (STOM) as a template to enhance the external quantum efficiency (EQE) of nitride 380nm ultraviolet (UV) light-emitting diodes (LEDs) by up to 83% [Kun-Ching Shen et al, IEEE Electron ...
Tags: LED light, LED, LED light extraction
Taiwan’s National Chung Hsing University has used nitride semiconductor growth on gallium nitride nanocolumns and nanoporosity achieved with photoelectrochemical etching to boost the light output power of light-emitting diodes (LEDs) ...
Tags: LEDs, Air-Channels, Nanoporous Structure
Researchers at University of Notre Dame and Kopin Corp have developed high-performance nitride semiconductor high-electron-mobility transistors (HEMTs) with indium gallium nitride (InGaN) channels [Ronghua Wang et al, Appl. Phys. Express, ...
Tags: semiconductor, high electron mobility transistors, InGaN
Sophia University in Tokyo, Japan, has used nanocolumns of nitride semiconductor to produce different emission color LEDs in a single growth process for what is claimed to be the first time [Katsumi Kishino et al, Appl. Phys. Express, vol6, ...
Tags: Sophia University, LEDs, Sapphire substrates, LEd lighting
Yale University has developed techniques to release nitride semiconductor layers and transfer them to other substrates, allowing vertical current-flow light-emitting diodes (LEDs) [Yu Zhang et al, Appl. Phys. Lett., vol100, p181908, 2012]. ...
Light output power increased 23% over conventional lateral LEDs. Korea's universities have used aluminum-alloyed graphite as a thermally conducting substrate to improve the light output power performance of nitride semiconductor LEDs by ...
Tags: LED
University of California,Santa Barbara(UCSB)has demonstrated for the first time nonpolar m-plane(10-10)nitride semiconductor vertical-cavity surface-emitting laser(VCSEL)diodes[Casey Holder et al,Appl.Phys.Express,vol5,p092104,2012]. The ...
Tags: nitride semiconducto, VCSEL, electrical
Two Yale University researchers have developed epitaxial distributed Bragg reflectors (DBRs) in nitride semiconductors with reflectivities of more than 98% [Danti Chen and Jung Han, Appl. Phys. Lett., vol101, p221104, 2012]. Further, the ...
Epistar,the Taiwan-based company that is ranked as one of the world's largest manufacturers of high-brightness LEDs,has become the latest major producer to hint at a transfer to a potentially much cheaper silicon platform. Currently the ...
Australian clean technology innovator,BluGlass Limited announced today that it is now producing n-type gallium nitride(GaN)films with demonstrated industry equivalent performance properties using its breakthrough low temperature Remote ...