Qorvo Inc of Greensboro, NC and Hillsboro, OR, USA (which provides core technologies and RF solutions for mobile, infrastructure and defense applications) has launched two new power amplifiers (PAs) including what is claimed to be the first ...
Tags: Qorvo, PAs, GaN technology
Researchers at North Carolina State University (NCSU) have created a high-voltage and high-frequency silicon carbide (SiC) power switch that could cost much less than similarly rated SiC power switches, it is reckoned. The findings could ...
EV Group of St Florian, Austria - a supplier of wafer bonding and lithography equipment for semiconductor, micro-electro-mechanical systems (MEMS), compound semiconductors, power devices and nanotechnology applications says that a HERCULES ...
Tags: EV Group, NIL, EVG-Leti INSPIRE
Tokyo-based equipment maker Disco Corp has developed the KABRA (Key Amorphous-Black Repetitive Absorption) laser ingot slicing method. Implementing the process is said to enable high-speed production of silicon carbide (SiC) wafers, ...
Tags: SiC, Disco Corp, laser ingot slicing method
Due to falling prices and the commercial availability of wide-bandgap (WBG) semiconductor power devices from multiple sources, the adoption of silicon carbide (SiC) and gallium nitride (GaN) power devices in power supplies for computers, ...
Tags: Semiconductor, GaN power devices
When the first SiC diode was launched in 2001, the industry questioned the future of the SiC power business: Will it grow? Is this a real business? But 15 years later, in 2016, people don't ask these questions anymore, since the SiC power ...
Tags: SiC Power, SiC device
The RF power semiconductor market will grow from $10.57bn in 2015 to $31.26bn in 2022, rising at a compound annual growth rate (CAGR) of 15.4% between 2016 and 2022, forecasts the firm MarketsandMarkets. According to the report 'RF Power ...
Tags: Marketsandmarkets, CAGR
Researchers at Hong Kong University of Science and Technology (HKUST) are proposing using III-nitride and silicon carbide (SiC) hybrid technologies for high-voltage power devices [Jin Wei et al, IEEE Transactions on Electron Devices, vol63, ...
Xidian University in China has used pulsed metal-organic chemical vapor deposition (MOCVD) to increase indium gallium nitride (InGaN) room-temperature channel mobility to 1681cm2/V-s, which is claimed to be a record [Yachao Zhang et al, ...
Integrated passive device maker OnChip Devices Inc of Santa Clara, CA, USA says that its wafer fabrication facility is offering backside metallization (BSM) of thin films for applications such as military, medical, and instrumentation. ...
Tags: Sputtering, HB-LEDs, GaN-on-Si, Wafer bonding
At the PCIM (Power Conversion Intelligent Motion) Europe 2016 event in Nuremberg, Germany (10-12 May), Panasonic Automotive & Industrial Systems Europe showcased its technology lineup, highlighting innovations including passive components, ...
Tags: GaN power devices, SiC
MACOM Technology Solutions Holdings Inc of Lowell, MA, USA (which makes semiconductors, components and subassemblies for analog RF, microwave, millimeter-wave and photonic applications) has launched the MAGe-102425-300, a 300W gallium ...
Tags: MACOM, semiconductors, photonic applications
Deposition equipment maker Aixtron SE of Herzogenrath, near Aachen, Germany says that its G5+ C multi-wafer batch metal-organic chemical vapor deposition (MOCVD) platform has been qualified for the manufacturing of specific buffer layers as ...
HRL Laboratories LLC in the USA has developed a gallium nitride (GaN) vertical tunneling Schottky barrier diode (TBS) that gives good combined on and off performance, compared with vertical Schottky barrier diodes (SBDs) [Y. Cao et al, ...
The US Department of Defense's Air Force Research Laboratory, Sensors Directorate, Devices for Sensing Branch (AFRL/RYDD) has issued a Request For Information (RFI) titled 'Development of Large Diameter Silicon Carbide Substrate and ...