radar applications articles & resources on Made-in-China.com

Wolfspeed Extends 50V GaN Hemt Family to High-Efficiency 3.0GHz 250W

Aug 28, 2017

Wolfspeed of Raleigh, NC, USA — a Cree Company that makes silicon carbide (SiC) power products and GaN-on-SiC high-electron-mobility transistors (HEMTs) and monolithic microwave integrated circuits (MMICs) — has extended its ...

Tags: Wolfspeed, silicon carbide

Qorvo Launches Compact GaN L- and S-Band Power Amplifiers for Advanced Radar Systems

Oct 12, 2016

Qorvo Inc of Greensboro, NC and Hillsboro, OR, USA (which provides core technologies and RF solutions for mobile, infrastructure and defense applications) has launched two new power amplifiers (PAs) including what is claimed to be the first ...

Tags: Qorvo, PAs, GaN technology

Raytheon Wins MDA Contract Modification to Transition AN/TPY-2 Radar Production From GaAs to GaN

Oct 12, 2016

The US Missile Defense Agency has awarded Raytheon Company of Waltham, MA, USA a contract modification to develop a transition to production process to incorporate gallium nitride (GaN) components into existing and future AN/TPY-2 radars. ...

Tags: Raytheon, MDA, contract

MACOM Debuts 27 New DC-100GHz MMICs

Oct 12, 2016

In booth 207 at European Microwave Week (EuMW 2016) in London, UK (4–6 October), MACOM Technology Solutions Inc of Lowell, MA, USA (which makes semiconductors, components and subassemblies for analog RF, microwave, millimeter-wave and ...

Tags: EuMW 2016, MACOM, DC-100GHz MMICs

Macom Launches High-Power DC- 22GHz MMMIC Power Amplifiers for Test & Measurement, Electronic Warfare and Radar

Sep 27, 2016

MACOM Technology Solutions Inc of Lowell, MA, USA (which makes semiconductors, components and subassemblies for analog RF, microwave, millimeter-wave and photonic applications) has launched the MAAP-011247 and MAAP-011248 distributed power ...

Tags: MACOM, power amplifiers

Wolfspeed Launches Highest-Power 50V L-Band Radar GaN HEMT

Sep 23, 2016

In booth 156 at European Microwave Week (EuMW 2016) in London, UK (3–7 October), Wolfspeed of Research Triangle Park, NC, USA — a Cree Company that makes gallium nitride on silicon carbide (GaN-on-SiC) high-electron-mobility ...

Tags: Wolfspeed, GaN-on-SiC, HEMTs, EuMW 2016

Plextek RFI Unveils Phased-Array GaN MMIC Reference Design

Jul 16, 2016

Plextek RFI Ltd of Cambridge, UK, which designs and develops RFICs, MMICs and microwave/millimeter-wave modules, has announced a new reference design for a gallium nitride (GaN) power amplifier (PA) monolithic microwave integrated circuit ...

Tags: MMICs, microwave, millimeter-wave modules

Diamond Microwave Launches GaN X-Band Sspas with Integrated Monitoring and Protection

May 26, 2016

Diamond Microwave Devices Ltd of Leeds, UK (which specializes in high-performance microwave power amplifiers) has launched a range of X-band gallium nitride (GaN)-based pulsed solid-state power amplifiers (SSPA) offering integrated ...

Tags: GaN-on-diamond, radar application

Cobham And RFHIC To Co-Develop GaN High-Power Amplifier Modules

Mar 21, 2016

UK-based Cobham plc (which designs and manufactures equipment, specialized systems and components for the aerospace, defense, energy and electronics industries) has established a strategic partnership to incorporate the gallium nitride ...

Tags: Cobham, RFHIC, GaN

Pasternack Adds Waveguide Frequency Mixers Operating Across Full Ka, Q, U, V, E & W Ww-Wave Bands

Nov 24, 2015

Pasternack Enterprises Inc of Irvine, CA, USA (which makes both passive and active RF, microwave and millimeter-wave products) has added new millimeter-wave (mm-wave) waveguide frequency mixers available in six down-conversion and six ...

Tags: Pasternack, waveguide mixers, GaAs

Wolfspeed Launches 50V Plastic-Packaged GaN HEMTs for LTE & Radar

Oct 15, 2015

Wolfspeed of Raleigh, NC, USA, a Cree Company that supplies gallium nitride on silicon carbide (GaN-on-SiC) high-electron-mobility transistors (HEMTs) and monolithic microwave integrated circuits (MMICs), has introduced two plastic-packaged ...

Tags: Wolfspeed, high-electron-mobility transistors, GaN HEMT devices

Infineon's High-Frequency Radar Chip Team Nominated for Deutscher Zukunftspreis

Sep 17, 2015

The high-frequency radar chip team at Infineon Technologies AG of Munich, Germany has been nominated for the Deutscher Zukunftspreis 2015 (German Future Award), the German President's Award for Innovation in Science and Technology. Radar ...

Tags: high-frequency radar chip, Radar systems

Wolfspeed Exhibiting GaN HEMTs for Radar Applications at EuMW

Sep 15, 2015

In booth #240 at European Microwave Week (EuMW) 2015 in Paris, France (6–11 September), Wolfspeed of Raleigh, NC, USA, a Cree Company that supplies gallium nitride on silicon carbide (GaN-on-SiC) high-electron-mobility transistors ...

Tags: EuMW, Wolfspeed, GaN HEMTs

Diamond Microwave Launches 1kw Ultra-Compact Pulsed GaN X-Band SSPA

Sep 15, 2015

Exhibiting in Stand 250 at European Microwave Week (EuMW 2015) in Paris, France (6-11 September), Diamond Microwave Devices Ltd of Leeds, UK (which specializes in high-performance microwave power amplifiers) has announced a ten-fold ...

Tags: EuMW 2015, GaN, Diamond Microwave

MACM Samples 4th-Generation 100w GaN-on-Si Wideband Transistor

Sep 15, 2015

M/A-COM Technology Solutions Inc of Lowell, MA, USA (which makes semiconductors, components and subassemblies for analog RF, microwave, millimeter-wave and photonic applications) has announced that the MAGX-100027-100C0P, a wideband ...

Tags: semiconductors, photonic applications, transistor

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