Jing Zhang, an engineering faculty member at Rochester Institute of Technology, has received a $305,000 grant from the US National Science Foundation (NSF) to acquire an inductively coupled plasma reactive-ion etching (ICP-RIE) system for ...
Tags: RIT, NSF, ICP-RIE system
Keysight Technologies Inc of Santa Rosa, CA, USA (which provides electronic measurement instruments, systems and related software used in the design, development, manufacture, installation, deployment and operation of electronic equipment) ...
Tags: Keysight, Virginia Diodes, Chalmers
Researchers at North Carolina State University (NCSU) have created a high-voltage and high-frequency silicon carbide (SiC) power switch that could cost much less than similarly rated SiC power switches, it is reckoned. The findings could ...
In a 25,000-square-foot commercial office on the Rensselaer Technology Park campus in Troy, N.Y., scientists from the Lighting Research Center (LRC) at Rensselaer Polytechnic Institute are making plans to install LED lighting with ...
Tags: LRC, SSL, 3D printing
The global power amplifier market will increase at a compound annual growth rate (CAGR) of nearly 14% from 2016-2020, according to a report from Technavio that provides an analysis of the most important trends expected to impact the market. ...
Tags: power amplifier, CAGR
Oracle Networking Group in the USA believes that it has made the first demonstration of an integrated surface-normal coupled laser array on a silicon-on-insulator photonics platform [Shiyun Lin et al, Optics Express, vol24, p21455, 2016]. ...
Two doctoral students and several research scientists from the Lighting Research Center (LRC) at Rensselaer Polytechnic Institute attended last month’s SPIE Optics + Photonics conference to present research on new innovative ...
Researchers at nanoelectronics research center imec of Leuven, Belgium (a partner in Solliance and EnergyVille), Germany's Karlsruhe Institute of Technology (KIT), and ZSW (Zentrum für Sonnenenergie- und Wasserstoff-Forschung — ...
Tags: stacked perovskite, CIGS, solar module
Imec and Ghent University in Belgium have used aspect ratio trapping (ART) techniques to produce indium gallium arsenide (InGaAs) multiple quantum wells (MQWs) on 300mm-diameter silicon in a ridge format that could be used in future laser ...
Tags: InGaAs MQWs, InGaAs Laser diodes, Imec and Ghent University
Molecular-level filter could revolutionize energy-intense chemical process Significantly reduces amount of energy used in polyester and plastic manufacturing Research published in nation’s leading peer-reviewed journal, ...
Tags: ExxonMobil, Georgia Tech, energy use
Korea Institute of Science and Technology (KIST) claims a record low subthreshold swing of 68mV/decade for a gallium arsenide (GaAs) field-effect transistor (FET) [SangHyeon Kim et al, IEEE Electron Device Letters, published online 24 ...
Researchers in the USA have grown two-dimensional (2D) layers of gallium nitride (GaN) using a graphene encapsulation on silicon carbide (SiC) substrate [Zakaria Y. Al Balushi et al, Nature Materials, published online 29 August 2016]. The ...
Tags: 2D GaN, graphene encapsulation, SiC
Institute of High Pressure Physics (IHPP) and TopGaN Ltd, both of Poland, have been jointly developing indium gallium nitride (InGaN) waveguide structures for use in blue laser diodes (LDs) [Grzegorz Muziol et al, Appl. Phys. Express, vol9, ...
Lundberg Family Farms is set to introduce new organic antique white quinoa variety in the US this month. A national leader in organic rice and whole grain products, Lundberg Family Farms became the first brand to offer American-grown ...
Researchers in China have developed indium gallium nitride (InGaN) photovoltaic devices that increase in efficiency with temperature up to 423K [Zhaoying Chen et al, Appl. Phys. Lett., vol109, p062104, 2016]. "The positive efficiency ...
Tags: InGaN solar cells InGaN, MOCVD, positive temperature coefficient